Preparation method of SiO2 nanorod/CdS

A nanorod, attapulgite technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as unseen SiO

Active Publication Date: 2013-08-14
山东雪地铝业科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But no SiO 2 Report on Preparation Method of Nanorod / CdS

Method used

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  • Preparation method of SiO2 nanorod/CdS
  • Preparation method of SiO2 nanorod/CdS
  • Preparation method of SiO2 nanorod/CdS

Examples

Experimental program
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Embodiment 1

[0017] Example 1: Take 4.0000 g of attapulgite clay, dissolve it in 200 mL of hydrochloric acid solution, heat to reflux for 4 hours, and the heating temperature is 120°C. The active SiO was then evaporated and dried in vacuo 2 . Then take 1.0000g SiO 2 Grind and move into the PTFE lining, and add the template agent EDTA, CdCl in sequence 2 、Na 2 S, the masses are 1.2000g, 1.3960g, 0.6536g respectively, heated at 120℃ for 2h. Finally, wash and dry to obtain a composite material. The X-ray powder diffraction experiment was carried out on the obtained sample, and its morphology and structure were observed under a transmission electron microscope.

[0018] According to the SiO that the process parameter of embodiment 1 makes 2 The XRD patterns of the nanorods are as figure 1 shown. In the prepared SiO 2 There is obvious SiO in the map 2 The characteristic diffraction peaks indicate that the attapulgite clay was acidified to produce SiO 2 Nano stave.

[0019] SiO 2 XR...

Embodiment 2

[0020] Example 2: Change the attapulgite clay to 4.0000g, dissolve it in 200mL of hydrochloric acid solution, heat to reflux for 4 hours, and the heating temperature is 120°C. The active SiO was then evaporated and dried in vacuo 2 . Then take 1.0000g SiO 2 Grind and move into the PTFE lining, and add the template agent PVP, CdCl in sequence 2 、Na 2 S, the masses are 1.0000g, 1.2690g, 0.5401g respectively, heated at 100℃ for 2h. Finally, wash and dry to obtain a composite material. Subsequent detection was as in Example 1.

Embodiment 3

[0021] Example 3: 4.0000 g of attapulgite clay was taken, dissolved in 200 mL of hydrochloric acid solution, and heated to reflux for 4 hours at a heating temperature of 120°C. The active SiO was then evaporated and dried in vacuo 2 . Then take 1.0000g SiO 2 Grind and move into the PTFE lining, and add template agent P123, CdCl in sequence 2 、Na 2 S, the masses are 1.5000g, 2.5380g, 1.2964g respectively, heated at 130℃ for 3h. Finally, wash and dry to obtain a composite material. Subsequent detection was as in Example 1.

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Abstract

The invention relates to a method for preparing a SiO2 nanorod / CdS composite material. The method is characterized by adopting active SiO2 nanorods obtained from attapulgite clay through acidification treatment as a carrier, taking a cadmium salt as a cadmium source, taking Na2S as a sulfur source, taking EDTA (ethylenediaminetetraacetic acid) and the like as a template agent, and reacting under hydrothermal conditions to obtain the SiO2 nanorod / CdS composite material. The SiO2 nanorod / CdS composite nanomaterial prepared by the method disclosed by the invention can be widely applied in the fields of control of environmental pollution, preparation of photocatalytic functional materials and the like.

Description

technical field [0001] The invention relates to the technical field of inorganic nanocomposite materials and functional materials, especially SiO 2 Nanorod / CdS composite preparation method. Background technique [0002] The use of semiconductor photocatalytic water splitting to produce hydrogen is one of the ideal approaches for solar photochemical storage. Among many photocatalysts, TiO 2 , SrTiO 3 Oxide semiconductors are stable, cheap and non-toxic, and have been studied in depth. However, these semiconductor materials have a wide band gap and only absorb ultraviolet light, so the utilization rate of solar energy is low. Sulfide semiconductors have also received extensive attention. Among many sulfides, CdS has a small band gap (Eg=2.4eV) and has a good response to visible light. If the sulfide semiconductor is loaded on a carrier with a high specific surface area, it can be used The strong interaction between the carrier and the active components can reduce the aggre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G11/02C01B33/18B82Y40/00B82Y30/00
Inventor 李霞章胡宗林孟英芹陆晓旺赵晓兵姚超陈志刚
Owner 山东雪地铝业科技有限公司
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