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Laser photovoltaic cell provided with PNP structure and preparation method thereof

A technology of laser photovoltaic cells and photovoltaic cells, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as reduced conversion efficiency, I-V curve deformation, and reduced fill factor of photovoltaic cells, so as to improve performance and solve leakage problems. Effect

Active Publication Date: 2013-08-14
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This distorts the I-V curve, which eventually leads to a decrease in the fill factor of the photovoltaic cell and a drastic reduction in conversion efficiency, such as figure 2 , the single-cell battery IV characteristics are good, and the double-junction series shows obvious leakage phenomenon

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  • Laser photovoltaic cell provided with PNP structure and preparation method thereof
  • Laser photovoltaic cell provided with PNP structure and preparation method thereof
  • Laser photovoltaic cell provided with PNP structure and preparation method thereof

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preparation example Construction

[0043]The embodiment of the present invention also discloses a method for preparing a laser photovoltaic cell with a PNP structure, including:

[0044] (1) Grow a P-type layer and an N-type layer on a semi-insulating substrate to form a reverse P / N junction;

[0045] (2) growing an N-type conductive layer sequentially on the above-mentioned N-type layer, and growing a barrier layer on the N-type conductive layer;

[0046] (3) An N-type absorber layer and a P-type absorber layer are sequentially grown on the above-mentioned N-type barrier layer to form a P / N junction;

[0047] (4) growing a P-type window layer on the above-mentioned P / N junction;

[0048] (5) growing a P-type contact layer on the above-mentioned P-type window layer as an ohmic contact;

[0049] (6) According to the battery standard process, prepare isolation grooves, positive electrodes, negative electrodes, anti-reflection layers, and electrode leads on the photovoltaic cell substrate formed by the above ste...

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Abstract

The invention discloses a laser photovoltaic cell provided with a PNP structure. The photovoltaic cell comprises a reversed P / N junction, an N type conducting layer, a P / N junction cell, a P type window layer and a P type contact layer which are formed on a semi-insulating substrate sequentially, wherein the reversed P / N junction comprises a P type layer and an N type layer which are formed on the semi-insulating substrate sequentially; and the P / N junction cell comprises an N type absorption layer and a P type absorption layer which are arranged sequentially away from a direction of the semi-insulating substrate. The invention further discloses a preparation method of the laser photovoltaic cell. The laser photovoltaic cell and the preparation method thereof solve the problem of electric leakage caused by illumination of the semi-insulating substrate effectively, the manufactured photovoltaic cell has the advantages of high parallel resistance and transfer efficiency and low electric leakage, and meanwhile, the requirement of a device for a GaAs substrate insulating property is reduced.

Description

technical field [0001] The invention relates to a PNP structure laser photovoltaic cell based on reverse junction technology and a preparation method thereof, in particular to a high-efficiency laser photovoltaic cell, especially a GaAs homogeneous PN junction on a semi-insulating GaAs substrate for photoelectric conversion Photovoltaic cells and methods for their preparation. Background technique [0002] The laser energy supply system is an innovative energy transfer system. With this system, the light emitted by the laser source is transmitted to the laser photovoltaic cell through the optical fiber, which can provide a stable power output. The conversion of light into electricity through optical fiber has more advantages than traditional metal wire and coaxial cable power transmission technology, and can be applied in radio communication, industry where electromagnetic interference needs to be eliminated or electronic devices need to be isolated from the surrounding envi...

Claims

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Application Information

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IPC IPC(8): H01L27/142H01L31/0352H01L31/0693H01L31/18H01L31/046
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 赵春雨董建荣于淑珍赵勇明李奎龙孙玉润曾徐路杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI