Preparation method of cadmium-free buffer layer in flexible CIGS thin film solar cell

A buffer layer and flexible technology, applied in the field of preparation of cadmium-free buffer layer, can solve the problems that the buffer layer of CIGS solar cells cannot be prepared, and the negative impact of CIGS absorber film.

Inactive Publication Date: 2013-08-21
任丘市永基光电太阳能有限公司
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Problems solved by technology

In this way, many mature thin film preparation processes cannot be used for the preparation of buffer layers for CIGS solar cells.
Such as magnetron sputtering, physical vapor depo

Method used

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  • Preparation method of cadmium-free buffer layer in flexible CIGS thin film solar cell
  • Preparation method of cadmium-free buffer layer in flexible CIGS thin film solar cell
  • Preparation method of cadmium-free buffer layer in flexible CIGS thin film solar cell

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Embodiment Construction

[0017] Embodiments of the present invention will be described in more detail below in conjunction with the accompanying drawings.

[0018] See attached figure 1 , is a flow chart of the method for preparing a zinc sulfide thin film of the present invention. Such as figure 1 , the preparation of the zinc sulfide buffer layer of the present invention starts from step S1 at first, that is, first depositing a barrier layer, a back electrode layer and a CIGS absorbing layer sequentially on the cleaned stainless steel substrate. Then carry out step S2, prepare the reaction solution that contains zinc source, sulfur source, complexing agent and buffering agent, wherein optimal each substance ratio is: zinc acetate concentration is 0.025mol / L, and thiourea concentration is 0.03mol / L , the complexing agent is sodium citrate 0.02mol / L and tartaric acid 0.018mol / L, and the pH value of the reaction solution is adjusted to 9.5-10.5 with ammonia water. In step S3, the sample is dried in ...

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Abstract

The invention discloses a preparation method of a cadmium-free buffer layer in a flexible CIGS thin film solar cell. The method is a chemical water-bath deposition method, and the prepared cadmium-free buffer layer is a zinc sulfide film. The method has the advantages of simple technology, large preparation area, low cost, simple equipment, no requirement of a vacuum system, low deposition temperature, and realization of growing polycrystalline or amorphous semiconductor films having a good stability and a high quality, . More importantly, there is no environmental pollution in the preparation process of zinc sulfide. The preparation method of the zinc sulfide film through chemical water-bath deposition comprises the following steps: 1, sequentially depositing a barrier layer, a back electrode layer and a CIGS absorption layer on a flexible substrate to form a sample; 2, preparing a reaction solution containing a zinc source, a sulfur source, a complexing agent and a buffer agent; 3, placing the sample in the reaction solution, and stirring and heating to prepare a film; and 4, drying a sample obtained in step 3 for later use.

Description

technical field [0001] The invention relates to a preparation method of a cadmium-free buffer layer in a flexible CIGS thin film solar cell. Background technique [0002] In flexible CIGS thin film solar cells, the buffer layer is located at a key position between the absorber layer and the window layer, which plays a very critical role in the cell efficiency. At present, the CIGS thin-film solar cell with the highest efficiency obtained in the laboratory uses cadmium sulfide as the buffer layer. However, since cadmium is a heavy metal, the environmental pollution of cadmium ions limits its further development and application. At the same time, the band gap of the cadmium sulfide film is only 2.4eV, which has a certain influence on the short-wave response of the battery absorbing layer. Therefore, the development of cadmium-free flexible CIGS solar cells has become a global hotspot. Zinc sulfide is currently the most promising buffer layer material to replace cadmium sulf...

Claims

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Application Information

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IPC IPC(8): C23C18/00H01L31/18
CPCY02P70/50
Inventor 孙玉娣
Owner 任丘市永基光电太阳能有限公司
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