LED structure capable of reducing working temperature of active area and manufacturing method thereof

A technology of LED structure and working temperature, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of LED heating, complex energy consumption of cooling means, poor cooling effect, etc., and improve light extraction efficiency , reduce the effective refractive index, and be easy to integrate and prepare
CN103296160AInactive Publication Date: 2013-09-11Shandong Huaguang Optoelectronics Co. Ltd. +1
6 Cites 5 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Shandong Huaguang Optoelectronics Co. Ltd.
Publication Date
2013-09-11
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to an LED structure capable of reducing work temperature of an active area and a manufacturing method of the LED structure. The LED structure comprises a substrate layer, an intrinsic GaN layer, an n-GaN limiting layer, an active zone luminous layer, a p-GaN limiting layer, a p-face electrode and an n-face electrode, wherein the upper surface of the p-GaN limiting layer or the lower surface of the p-GaN limiting layer is provided with holes, the holes form a hole array, the cycle of each hole is 2-20 microns, the diameter of each hole is 1-5 microns, the bottom edge of each hole is 30-50 nanometers away from the active zone luminous layer and a silver thin film with the thickness being 1-10 nanometers is arranged on the bottom edges of the holes. Due to the fact that the service lives of carriers which are compounded in a non-radiating mode are long, only after phonons are coupled, the carriers can be compounded. A strong local electric field which is generated through vibration of plasmons can conduct compensation on the carriers and a new channel is provided for compounding of the carriers with the long service lives, so that auxiliary compound rate of the phonons is reduced and the purpose of reducing heating of a device is realized.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to an LED structure for reducing the working temperature of an active region and a preparation method thereof, belonging to the technical field of light-emitting diode manufacturing. Background technique

[0002] In the 1950s, with the efforts of many well-known research institutions represented by IBM Thomas J. Watson Research Center, III-V semiconductors represented by GaAs rose rapidly in the field of semiconductor light emitting. Later, with the emergence of metal oxide chemical vapor deposition (MOCVD) technology, the growth of high-quality III-V semiconductors broke through the technical barrier, and semiconductor light-emitting diode devices with various wavelengths flooded into the market one after another. Compared with the current light-emitting devices, semiconductor light-emitting diodes have the characteristics of high theoretical efficiency, long life, and mechanical shock resistance, and are regarded as a new genera...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More