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Preparation method and application of self-assembled nanometer metal or semiconductor particle doped graphene microsheets

A graphene microchip and nano-metal technology, applied in the direction of graphene, nano-carbon, etc., can solve problems such as difficult to use, poor controllability, complicated and heavy experimental steps, etc., to achieve selectivity and diversity optimization, strong The effect of the function

Active Publication Date: 2016-06-08
JIANGNAN GRAPHENE RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The traditional preparation methods of graphene-based nano-metal or semiconductor composite materials include solvent reduction method and layer-by-layer self-assembly method. Not only the experimental steps are complicated and heavy, but also the controllability is not good, so it is difficult to use in actual industrial production.

Method used

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  • Preparation method and application of self-assembled nanometer metal or semiconductor particle doped graphene microsheets
  • Preparation method and application of self-assembled nanometer metal or semiconductor particle doped graphene microsheets
  • Preparation method and application of self-assembled nanometer metal or semiconductor particle doped graphene microsheets

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Paste the graphene oxide paper (thickness 13um, source: Changzhou Sixth Element Co., Ltd.) on the surface of the clean silicon wafer, and place it on the substrate stage in the vacuum evaporation coating chamber. Put 0.15g of gold wire in the molybdenum boat of the evaporation source. Cover the bell jar, turn on the mechanical pump, backing valve and molecular pump, and wait for the vacuum gauge to show that the vacuum in the chamber is pumped to 10 -4 At Pa, turn on the evaporation power supply and the film thickness tester; adjust the power supply current to 22 amperes, the molybdenum boat starts to turn red, and the gold wire melts and sprays and deposits toward the graphene oxide paper sample (deposition rate is about 1-2nm / s). When the thickness of the deposited gold film is detected to increase to 60nm with a film thickness meter (the surface of the sample appears light golden at this time), the evaporation power is turned off. Air is introduced into the coati...

Embodiment 2

[0030] 1. Paste the graphene oxide paper (thickness 13um, source: Changzhou Sixth Element Co., Ltd.) on the surface of the clean silicon wafer, and place it on the substrate stage in the vacuum evaporation coating chamber. 0.12g of silver wire was placed in the molybdenum boat of the evaporation source. Cover the bell jar, turn on the mechanical pump, backing valve and molecular pump, and wait for the vacuum gauge to show that the vacuum in the chamber is pumped to ~10 -4 When Pa, turn on the evaporation power supply and the film thickness tester; adjust the power supply current to 16 amperes, the molybdenum boat starts to turn red, and the silver wire melts and sprays and deposits toward the graphene oxide paper sample (the deposition rate is about 1-2nm / s). When the thickness of the deposited silver film is detected by a film thickness meter to increase to 60nm (at this time, the surface of the sample appears light silver), turn off the evaporation power supply. Air is intr...

Embodiment 3

[0035] 1. Paste the graphene oxide paper (thickness 13um, source: Changzhou Sixth Element Co., Ltd.) on the surface of the clean silicon wafer, and place it on the substrate stage in the vacuum evaporation coating chamber. A 0.12 g silicon oxide wafer was placed in a tungsten boat in the evaporation source. Cover the bell jar, turn on the mechanical pump, backing valve and molecular pump, and wait for the vacuum gauge to show that the vacuum in the chamber is pumped to ~10 -4 At Pa, turn on the evaporation power supply and the film thickness tester; adjust the power supply current to 45 amperes, the tungsten boat starts to turn red, the silicon oxide sheet melts and sprays and deposits toward the graphene oxide paper sample (deposition rate is about 1-2nm / s). When the thickness of the deposited silicon oxide film is detected by a film thickness meter to 60nm, turn off the evaporation power supply. Air is introduced into the coating chamber to normal pressure, and the bell jar...

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Abstract

The invention relates to a preparation method of a self-assembly nano-metal or semiconductor particle doped graphene microchip. According to the invention, with a graphene oxide paper plated with metal or semiconductor film, under the effect of high heat instantaneously released by pulse laser, the plating layer covered on the surface is subjected to self-assembly, such that an ordered metal or semiconductor nano-particle arrangement structure with substrate-reduced graphene oxide as a carrier is realized. Sizes and local ordering degree of the metal or semiconductor nano-particles uniformly distributed in the graphene carrier can be precisely controlled through subdivided regulations on parameters such as laser scanning speed, frequency, power, and the like. According to the invention, graphene micro-patterning and metal or semiconductor doping effect are combined. Through the controlling over local doping concentration and impurity components, complicated microelectronic devices can be prepared with relatively low cost. Also, rapid laser shaping is successfully applied on graphene material modification and micro-zone control. The novel electronic material is prepared through the laser technology with high efficiency, clean property, and high spatial ductility.

Description

technical field [0001] The invention relates to a method for preparing metal or semiconductor particle-doped graphene microchips by laser heating, and the uses of the doped graphene microchips include preparing highly conductive graphene magnetic composite materials, functional electrodes, photocatalysts, and the like. Background technique [0002] Laser rapid prototyping technology is a high-tech manufacturing technology that began to be commercialized in the 1980s. Since its appearance, it has attracted great attention from the academic circles and the manufacturing industry with its brand-new manufacturing ideas, rapid product manufacturing speed, and flexible product models. Rapid prototyping technology adapts to the development needs of modern advanced manufacturing technology and develops very rapidly. It has become a new branch of industry and a pillar industry of advanced manufacturing technology in developed countries. Rapid prototyping is an innovative technology ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 王皓陈海力郭冰童灵
Owner JIANGNAN GRAPHENE RES INST
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