Preparation method of metallization layer on surface of AIN film

Abstract

The invention relates to a preparation method of a metallization layer on the surface of an AIN film, which is applied to the fields of circuit substrates and encapsulation in the microelectronics industry. The method comprises the following steps of: in a vacuum environment and under certain growth temperature condition, growing an AIN film with the required thickness on the surface of a substrate by a magnetron sputtering method; growing a TiN(1-x), AlN(1-x) or CrN(1-x) (x=0-1) gradient film on the surface of the AIN film in a sputtering manner, wherein x gradually transits from 0 to 1, namely a nitrogen-rich phase gradually transits to a pure-metal phase; and finally, growing a pure Cu film in a sputtering manner at a proper temperature. Moreover, Cu can be electroplated by an electroplating process according to the use requirement on thickness of the Cu film so that the Cu film is thickened, and proper annealing treatment is performed after each step of film growth process, so as to improve the binding force between the film layers. The film obtained by the method has the advantages of high purity and strong adhesion, and the welding strength and reliability in the encapsulation process are guaranteed.

Description

technical field [0001] The invention relates to a method for preparing a metallized layer on the surface of an AlN film. The method can be used to form a surface metallized layer on the surface of the AlN film and various metals, and is especially suitable for the field of circuit substrates and packaging in the microelectronics industry. Background technique [0002] In recent years, with the development of large-scale integrated circuits and electronic equipment in the direction of high frequency, high power, and ultra-high integration, the demand for high-performance, high-density circuits in various applications is increasing. However, the continuous improvement of circuit density and function leads to continuous increase of circuit power and heat generation per unit time, so that the operating temperature of the circuit is also continuously increased. In order to prevent circuit components from being damaged due to heat accumulation and thermal cycling, this puts forwar...

AI Technical Summary

Problems solved by technology

[0012] The preparation technology of the metallized layer on the surface of the AlN ceramic substrate is limited by the difficulty of sintering the large-area AlN substrate, the weak bonding force between the substrate and the metal film, and poor structural stability, making it difficult for AlN materials to be used in the microelectronics industry. Technical Barriers to Widespread Adoption

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