Novel four-laminated non-crystallite germanium-silicon thin film solar battery and preparation method thereof

Abstract

A novel four-laminated non-crystallite germanium-silicon thin film solar battery is characterized by comprising a four-laminated series connection sub battery, a first laminated layer adopts a PIN structure comprising a P1 layer, an I1 layer and an N1 layer; a second laminated layer adopts a PIN structure comprising a P2 layer, an I2 layer and an N2 layer; a third laminated layer adopts a PIN structure comprising a P3 layer, an I3 layer and an N3 layer; a fourth layer adopts an PIN structure comprising a P4 layer, an I4 layer and an N4 layer; the P1 layer and the P2 layer are made of alpha-Si material, the P3 layer and the P4 layer are made of Mu c-Si material, the N1 layer and the N4 layer are made of alpha-Si material, and the N2 layer and the N3 layer are made of Mu c-Si material; the I1 layer is made of alpha-Si material, the I2 layer is made of alpha-SiGe material, the I3 layer is made of Mu-Si material, the I4 layer is made of Mu-SiGe material; the battery improves the photoelectric conversion efficiency, is stable in structure performance and facilitates industrialization.

Description

technical field [0001] The invention relates to a solar cell, in particular to a novel quadruple-stacked non-microcrystalline germanium-silicon thin-film solar cell and a preparation method thereof. Background technique [0002] Si-based thin-film solar cells have the advantages of high sunlight absorption coefficient, small temperature coefficient affecting cell efficiency, low production cost, and suitable for large-scale large-scale production. It is the film with the highest degree of industrialization and the largest actual production scale among all thin-film solar cells. Solar battery. The development of silicon-based thin-film solar cells is from single-junction a-Si to double-junction amorphous silicon germanium a-Si / a-SiGe. Due to the light-induced attenuation effect of amorphous silicon materials, its photoelectric conversion efficiency is affected. The optical bandgap of a-SiGe is 1.7-1.4eV, and the efficiency is low, only 8%. It needs to be further improved aft...

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Problems solved by technology

The development of silicon-based thin-film solar cells is from single-junction a-Si to double-junction amorphous silicon germanium a-Si / a-SiGe. Due to the light-induced attenuation effect of amorphous silicon materials, its photoelectric conversion efficiency is affected. The optical bandgap of a-SiGe is 1.7-1.4eV, and the efficiency is low, only 8%. It needs to be further improved after technological innovation, so as to reduce the unit cost; while the optical bandgap of μc-Si / μc-SiGe is between 1.1- 1.25eV, if the two can be combined, it can not only expand the wavelength range of sunlight absorption, improve the photoelectric conversion efficiency, but also reduce the unit cost, but how to combine the application of the two has always been a problem that plagues the industry, and still needs to be explored and innovated

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