Epitaxial structure and growth method for improving wavelength concentration in Gan-based epitaxial wafers

Abstract

An epitaxial structure for improving wavelength concentration in a GaN-based epitaxial wafer and a growth method of the epitaxial structure are provided. The epitaxial structure comprises the following portions form bottom to up: a substrate, a low-temperature GaN buffer layer, a GaN non-doped layer, an ALxGa1-xN insertion layer, an N-type GaN layer, a multi-quantum well (MQW) structure, a multi-quantum well active layer, a low-temperature P-type GaN layer, a P-type AlGaN layer, a high-temperature P-type GaN layer and a P-type contact layer. The epitaxial structure is characterized in that the ALxGa1-xN layer is inserted behind the GaN non-doped layer; after the ALxGa1-xN layer is inserted into the epitaxial structure, when the GaN non-doped layer is grown, the flow of the GaN non-doped layer is decreased by 10% to 30% compared with a situation where the ALxGa1-xN layer is not inserted in the epitaxial structure; and after the ALxGa1-xN layer is inserted in the epitaxial structure, when the N-type GaN layer is grown, the flow of the N-type GaN layer is decreased by 0 to 20% compared with the situation where the ALxGa1-xN layer is not inserted in the epitaxial structure. The growth method of the epitaxial structure of the invention can effectively improve the wavelength concentration in an LED epitaxial wafer.

Description

technical field [0001] The invention belongs to the technical field of III-VI nitride material preparation, and in particular relates to a novel GaN epitaxial structure, an epitaxial structure capable of effectively improving the wavelength concentration in a GaN-based epitaxial wafer and a growth method thereof. Background technique [0002] A light emitting diode (LED, Light Emitting Diode) is a semiconductor solid light emitting device, which uses a semiconductor PN junction as a light emitting material, and can directly convert electrical energy into light energy. When a forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers and majority carriers injected into the PN junction recombine, and the recombined energy is emitted in the form of light, which can form light of various colors. [0003] Group III-VI materials represented by GaN belong to wide bandgap semiconductor materials, and have been developed rapidly since the 1990s. ...

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Problems solved by technology

However, heterogeneous epitaxy will have adverse effects on LEDs. Take sapphire substrates as an example: there is a large lattice mismatch and thermal mismatch between sapphire and GaN materials, and the epitaxial wafers are warped by high temperatures during growth. curved, making the growth surface of the film not an ideal plane, which has an adverse effect on the concentration of wavelengths in the LED epitaxial film

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