Method for transferring graphene on metal foil substrate

A transfer method, graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of affecting use and difficult removal of liquid, and achieve the effect of improving cleanliness, improving quality, and simple and reliable transfer method

Active Publication Date: 2013-10-09
合肥微晶材料科技有限公司
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  • Abstract
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Problems solved by technology

Now the main method is to dry or dry naturally, such as figure 1 As shown, it is easy to leave liquid stains on the substrate, which affects the use, and the liquid remaining between the graphene and the target substrate is more difficult to remove
Another important aspect is that a layer of protective glue needs to be coated on the surface of the growing graphene substrate during wet transfer. How to perfectly remove the p...

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  • Method for transferring graphene on metal foil substrate
  • Method for transferring graphene on metal foil substrate

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Embodiment Construction

[0020] This embodiment takes copper foil substrate graphene as an example to introduce the transfer method of metal foil substrate graphene. The transfer of copper foil substrate graphene is carried out as follows:

[0021] a. Copper foil substrate graphene is cut to a size of 1cm×1cm. After the surface of graphene is spin-coated with a 0.5 μm thick protective glue, bake it at a temperature of 60°C for 5 minutes to obtain graphene with a protective glue layer on the surface. The glue is a mixture of 1ml of photoresist and 10ml of polymethyl methacrylate solution with anisole as solvent and a mass concentration of 5%. Graphene on the copper foil substrate can be cut to any size as required, and the thicker the thickness of the photoresist spin-coated on the surface of the graphene, the longer the baking time.

[0022] b. Put the graphene with a protective adhesive layer on the surface into the copper foil etching solution so that the protective adhesive layer is facing upwards...

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Abstract

The invention discloses a method for transferring graphene on a metal foil substrate. The method is characterized by comprising the following steps of: rotatably coating a protective colloid on the surface of the graphene to form a protective colloid layer on the surface of the graphene, wherein the protective colloid is a mixed solution of a photoresist and a polymethyl methacrylate solution; placing the graphene with the protective colloid layer on the surface into a metal foil etching solution, and forming a composite layer of a graphene/protective colloid layer after the metal foil is completely etched; taking out the composite layer of the graphene/protective colloid layer, placing the composite layer into deionized water to be soaked and cleaned, then, transferring the composite layer on a target substrate, next, centrifuging the target substrate on centrifuging equipment, immersing the target substrate into an acetone solvent after the centrifuging operation is ended, and etching the protective colloid layer. The protective colloid used in the method is simple in preparation and easy to remove, so that no protective colloid is remained on the graphene; the liquid remained on the surface of the graphene and between the graphene and the target substrate after being transferred on the target substrate is effectively removed in a centrifuging way.

Description

technical field [0001] The invention relates to a transfer method of graphene. Background technique [0002] Graphene is a carbon atom with sp 2 The hybrid orbitals form a hexagonal planar film with a honeycomb lattice. Graphene has the following excellent properties: such as: high transmittance, high thermal conductivity, high electron mobility, the world's smallest resistivity, thinnest thickness, and larger specific surface area. At present, the preparation methods of graphene mainly include: mechanical exfoliation method, epitaxy method, graphite oxide reduction method, epitaxial growth method, and chemical vapor deposition method. Among them, the chemical vapor deposition method can meet the requirements of large-scale preparation of high-quality and large-area graphene. The main transfer methods of graphene grown by chemical vapor deposition (CVD method) include: 1. "Wet etching" transfer method, 2. . "roll-to-roll" transfer method, 3. "electrochemical transfer" met...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/184
Inventor 张梓晗吕鹏
Owner 合肥微晶材料科技有限公司
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