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Schottky device and manufacturing method thereof

A Schottky potential and device technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as complex manufacturing processes, and achieve the effects of simplifying the manufacturing process and good reverse blocking characteristics

Active Publication Date: 2013-11-06
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is the planar layout, the traditional planar Schottky diode has a relatively complicated manufacturing process, and three photolithography etching processes are required to complete the production and manufacture of the device

Method used

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  • Schottky device and manufacturing method thereof
  • Schottky device and manufacturing method thereof
  • Schottky device and manufacturing method thereof

Examples

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Embodiment 1

[0022] figure 1 It is a sectional view of a Schottky device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0023] A Schottky device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 The second conductive semiconductor material 4 is located on the side wall of the trench and is a semiconductor silicon material of P conductivity type; the Schottky barrier junction 5 is located on the surface of the first conductive semiconductor material 3 and is formed by a semiconducto...

Embodiment 2

[0033] figure 2 It is a sectional view of a Schottky device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0034] A Schottky device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 The second conductive semiconductor material 4 is located at the bottom of the trench and is a semiconductor silicon material of P conductivity type; the Schottky barrier junction 5 is located on the surface of the first conductive semiconductor material 3 and is formed by a semiconductor...

Embodiment 3

[0044] image 3 It is a sectional view of a Schottky device of the present invention, combined below image 3 The semiconductor device of the present invention will be described in detail.

[0045] A Schottky device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the sidewall and bottom of the trench, is a semiconductor silicon material of P conductivity type; the Schottky barrier junction 5, located on the surface of the first conductive semiconductor material 3, is a semiconductor silico...

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Abstract

The invention discloses a Schottky device. A semiconductor device of the Schottky device is provided with a terminal of a groove structure, the manufacturing process of the device is simplified, moreover, a junction terminal extension structure is led to the groove structure, and the device is made to have the good reverse blocking characteristic. The invention further provides a manufacturing method of the Schottky device.

Description

technical field [0001] The invention relates to a Schottky device, and also relates to a preparation method of the Schottky device. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is the planar layout, the traditional planar Schottky diode has a relatively complicated manufacturing process, and three photolithographic etching processes are required to complete the production and manufacture of the device. Contents of the invention [0004] The present invention aims at the above problems, and provides a Schottky device and a preparation method thereof. [0005] A Schottk...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L21/329
Inventor 朱江
Owner 北海惠科半导体科技有限公司
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