Miniature gallium nitride integrated device

Abstract

Provided is a miniature gallium nitride integrated device. Material of a gallium nitride substrate is provided; an Ohmic contact electrode and a Schottky contact electrode are manufactured on the surface of the gallium nitride substrate, and therefore a plane gallium nitride diode array arranged into a full-wave rectifier bridge structure, an independent field effect transistor and an independent plane diode are formed. When the miniature gallium nitride integrated device is applied, complex functions can be achieved on a single chip, manufacturing cost is reduced, and packaging cost is reduced. When the miniature gallium nitride integrated device is applied to a power conversion device, conduction loss can be reduced, switching speed can be increased, the number of heat dissipation devices can be reduced, the area of a circuit can be reduced, the sizes and the weight of capacitors and electrical inductance devices can be reduced, and miniaturization and a light-weight trend are achieved.

Description

[0001] technical field [0002] The invention discloses a micro gallium nitride (GaN) integrated device, which belongs to the field of power semiconductor devices. Background technique [0003] After years of development of power semiconductor devices based on silicon materials, the performance of the devices has approached the theoretical limit of silicon materials. At present, power semiconductor devices are entering the era of third-generation wide bandgap semiconductors represented by gallium nitride. Compared with silicon-based power semiconductor devices, gallium nitride-based power semiconductor devices have great advantages in terms of reducing the power loss of the device itself, improving switching frequency and device heat resistance. [0004] Power semiconductor devices include two types: three-terminal devices with switching functions, such as field effect transistors; two-terminal devices with rectification functions, such as diodes. Compared with power conve...

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Problems solved by technology

[0005] Although the power conversion device using GaN power devices has the above advantages, since the application of GaN discrete devices is mainly high-power power conversion, limited by power density and packaging standards, it is more difficult to further reduce the size of discrete devices Therefore, the power conversion device directly using GaN discrete power devices still has problems such as large circuit volume and the need for multiple heat dissipation components.

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