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Optical switch

A technology of optical gate switch and optical waveguide, applied in optics, nano-optics, nonlinear optics, etc., can solve the problems of large size and instability of gate switch, and achieve the effect of high stability

Inactive Publication Date: 2016-04-06
NAT INST OF ADVANCED IND SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The size of the interferometer of the optical gate switch of the space optical system type is large, so the instability of the gate switch operation becomes a problem

Method used

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no. 1 example

[0063] A preferred embodiment for forming a monolithically integrated shutter switch will be described.

[0064] In order to facilitate the growth of a quantum well structure that produces a phase modulation effect due to interband transitions, an InP substrate is used as a wafer for forming an optical integrated circuit.

[0065] After growing the InP buffer layer on the InP substrate by the molecular beam epitaxy method, it is further grown so that the number of cycles of the growth is suitable for the InGaAs / AlAsSb coupled double quantum well structure disclosed in detail (S.Gozu et al., AppliedPhysicsExpress, 2 , 042201-1-3 (2009).) or indicates the thickness required for a quantum well structure equal to or greater than the phase modulation effect of the quantum well to function as a waveguide, after which an upper cladding layer of 1 μm thickness is grown . As a material of the upper cladding layer, any one of InP, InAlAs, and GaAlAsSb is used. The multi-layered InGaAs...

no. 2 example

[0094] In the second embodiment, an improvement is made on the basis of the basic structure of the first embodiment, that is, the propagation loss of the element is reduced for TE polarized signal light. refer to Figure 7 to explain. Figure 7 shows the basic structure diagram of the present invention (refer to figure 1 ) is a structure for reducing the loss of the signal light of the waveguide other than the phase modulation part. By phosphorus ion implantation and rapid thermal annealing, to make Figure 7 Quantum well mixing occurs outside the region of the phase modulation section 15 . The structure of the second embodiment is produced by the same method as that of the first embodiment, however, it is different in the following process. Using SiO 2 For example, a mask is formed on a region corresponding to the phase modulation portion 15 on a wafer used for fabrication of an optical integrated circuit. Next, for example, a dose of 1×10 14 ~1×10 15 / cm 2 P or As i...

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Abstract

An object of the present invention is to realize an optical gate switch of a monolithic integration type which can avoid problems of losses caused by light coupling of a phase modulation unit to a interferometer optical circuit unit, and can be minimized by integration. The optical gate switch according to the present invention includes an optical waveguide wafer in which a quantum well having a phase modulation effect which is generated by an intersubband transition is set as a core layer; a Michelson interferometer formed on the optical waveguide wafer; and a variable light intensity attenuation unit adjusting a light balance of an interferometer in one of reflection side arms of the Michelson interferometer reflection.

Description

technical field [0001] The present invention relates to an optical gate switch. Background technique [0002] It was found that if the TM polarized light is used to photoexcite the subband transition of the InGaAs / AlAsSb semiconductor quantum well, a phase modulation effect with a response speed of several picoseconds will be produced relative to the TE polarized light without absorption loss (refer to the non-patent literature 1). The inventors of the present invention reported an ultra-high-speed optical gate switch using the phase modulation effect described above (see Non-Patent Document 2). Among the shutter switches described above, there is a form of a Mach-Zehnder interferometer of the space optical system type constituted by combining optical components having an angular size ranging from several mm to about 1 cm, such as mirrors and polarizing beam splitters. An optical waveguide including a quantum well exhibiting a phase modulation effect is introduced into an ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/365G02F1/017
CPCB82Y20/00G02F1/01708G02F1/2257G02F2203/48G02F1/01733G02F1/01775G02F1/212G02F1/215
Inventor 秋本良一牛头信一郎物集照夫石川浩
Owner NAT INST OF ADVANCED IND SCI & TECH
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