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Novel Cd-Te based thermoelectric material and preparation method thereof

A thermoelectric material and matrix technology, which is applied in the direction of the lead wire material of the thermoelectric device junction to achieve the effects of uniform distribution of elements, short preparation time and simple preparation process

Active Publication Date: 2013-11-20
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, how to improve cadmium telluride so that it can be used as a thermoelectric material has not been reported yet.

Method used

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  • Novel Cd-Te based thermoelectric material and preparation method thereof
  • Novel Cd-Te based thermoelectric material and preparation method thereof
  • Novel Cd-Te based thermoelectric material and preparation method thereof

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preparation example Construction

[0045] The preparation method of the thermoelectric material of the present invention comprises the following steps:

[0046] (a) Provide tellurium, cadmium, and provide doping raw materials and / or composite raw materials;

[0047] (b) heating the tellurium, cadmium, and the doping raw material and / or composite raw material for 1-50 hours under vacuum and high temperature conditions to obtain a mixture, and the high temperature refers to 800-1500°C;

[0048] (c) grinding the mixture obtained in step b) into powder after cooling;

[0049] (d) Sintering the powder obtained in step c) to obtain the thermoelectric material, wherein

[0050] The doping raw material is CdX 2 Or A, where X is a halogen element, and A is a metal element with a valence of +3;

[0051] The composite raw material is a conductive element or a conductive compound;

[0052] The sintering is hot press sintering, spark plasma sintering or microwave sintering.

[0053] In a preferred embodiment, the prepa...

Embodiment 1

[0067] Weigh the bulk cadmium (Cd) and bulk tellurium (Te) according to the mass ratio of 0.5:1, and then add 1% (molar percentage) of cadmium chloride (CdCl 2 ), put it into a quartz tube whose inner wall has been coated with carbon, and then vacuumize the quartz tube (to 10 -3 torr) and encapsulate the quartz tube with an acetylene flame. Put the vacuum-packed quartz tube in a high-temperature furnace, raise it to 850°C at 5°C / min, and keep it for 5 hours, then raise it to 1200°C at 3°C / min, keep it for 8 hours, and then lower it to room temperature at 10°C / min taken out, thus obtaining chlorine-doped cadmium telluride polycrystalline material.

[0068] The quartz tube cooled to room temperature was crushed, and the chlorine-doped cadmium telluride polycrystalline material was taken out for grinding, and the powder with a particle size of 60 μm-180 μm was subjected to spark plasma sintering (SPS). The sintering temperature was 850°C. The sintering pressure used is 50MPa, t...

Embodiment 2

[0070] Weigh the bulk cadmium (Cd) and bulk tellurium (Te) according to the mass ratio of 1.0:1, and then add 1% (molar percentage) of cadmium bromide (CdBr 2 ), put it into a quartz tube whose inner wall has been coated with carbon, and then vacuumize the quartz tube (to 10 -3 torr) and encapsulate the quartz tube with an acetylene flame. Place the vacuum-encapsulated quartz tube in a high-temperature furnace, raise it to 1100°C at a rate of 20°C / min, keep it warm for 12 days, and then cool it down to room temperature naturally to obtain a chlorine-doped cadmium telluride polycrystalline material. The quartz tube cooled to room temperature is crushed, and the chlorine-doped cadmium telluride polycrystalline material is taken out and ground to a powder with a particle size of 60 μm-180 μm. The above-mentioned powders were hot-pressed and sintered, the sintering temperature was selected as 880°C, the sintering pressure was 60MPa, the heating rate was 50°C / min, and the holding ...

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Abstract

The invention provides a novel Cd-Te based thermoelectric material and a preparation method thereof. The Cd-Te matrix of the Cd-Te based thermoelectric material is doped with a halogen and / or a positive-trivalent metal element, and / or compounded with a conductive simple substance or a conductive compound or a combination of the conductive simple substance and the conductive compound. The preparation method comprises the following steps: heating Te, Cd, the doped raw material and / or the composite raw material under a vacuum high temperature condition to obtain a mixture, cooling the mixture, grinding the mixture to form powder, and sintering the powder to obtain the thermoelectric material. The novel thermoelectric material provided in the invention for the first time has the advantages of uniform element distribution, bulkiness, polycrystal, simple preparation technology and short preparation time.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to a Cd-Te-based thermoelectric material with good thermoelectric properties and a preparation method thereof. Background technique [0002] Thermoelectric material is a functional material that uses the transport of carriers and phonons in solids and their interactions to realize direct mutual conversion of thermal energy and electrical energy. Thermoelectric power generation or refrigeration devices made of thermoelectric materials are pollution-free, noise-free, wear-free, Small size, fast response, easy maintenance, safe and reliable, etc. As a new type of clean energy technology, thermoelectric conversion technology, especially its application to combined power generation of industrial waste heat or solar heat, is of great significance for improving energy utilization, developing circular economy, and building a conservation-oriented society. [0003] The level of therm...

Claims

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Application Information

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IPC IPC(8): C04B35/515C04B35/622H01L35/16
Inventor 吴萌蕾蒋俊肖昱琨徐静涛江浩川
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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