Novel Cd-Te based thermoelectric material and preparation method thereof

A thermoelectric material and matrix technology, which is applied in the direction of the lead wire material of the thermoelectric device junction to achieve the effects of uniform distribution of elements, short preparation time and simple preparation process

Active Publication Date: 2013-11-20
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, how to improve cadmium telluride so that it can be

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  • Novel Cd-Te based thermoelectric material and preparation method thereof
  • Novel Cd-Te based thermoelectric material and preparation method thereof
  • Novel Cd-Te based thermoelectric material and preparation method thereof

Examples

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Example Embodiment

[0045] The preparation method of the thermoelectric material of the present invention includes the following steps:

[0046] (a) Provide tellurium and cadmium, and provide doped raw materials and / or composite raw materials;

[0047] (b) Heating the tellurium, cadmium, and the doped raw materials and / or composite raw materials for 1-50 hours under vacuum high temperature conditions to obtain a mixture, and the high temperature refers to 800-1500°C;

[0048] (c) After cooling the mixture obtained in step b), grind it into powder;

[0049] (d) Sintering the powder obtained in the step c) to obtain the thermoelectric material, wherein

[0050] The doping material is CdX 2 Or A, where X is a halogen element and A is a metal element with a valence of +3;

[0051] The composite raw material is a conductive element or a conductive compound;

[0052] The sintering is hot pressing sintering, spark plasma sintering or microwave sintering.

[0053] In a preferred embodiment, the preparation method inc...

Example Embodiment

[0066] Example 1

[0067] The bulk cadmium (Cd) and bulk tellurium (Te) are weighed according to a mass ratio of 0.5:1, and then 1% (mol %) of cadmium chloride (CdCl) is added 2 ), put it into a quartz tube coated with carbon on the inner wall, and then vacuum the quartz tube (to 10 -3 Below torr) and encapsulate the quartz tube with an acetylene flame. Put the vacuum-encapsulated quartz tube in a high temperature furnace, raise it to 850°C at 5°C / min and keep it warm for 5 hours, then raise it to 1200°C at 3°C / min, and lower it to room temperature at 10°C / min after 8 hours. Take it out to obtain a chlorine-doped cadmium telluride polycrystalline material.

[0068] The quartz tube cooled to room temperature is broken, and the chlorine-doped cadmium telluride polycrystalline material is taken out for grinding, and the powder material with a particle size of 60μm-180μm is used for spark plasma sintering (SPS). The sintering temperature is 850℃. The used sintering pressure is 50MPa, ...

Example Embodiment

[0069] Example 2

[0070] The bulk cadmium (Cd) and bulk tellurium (Te) are weighed at a mass ratio of 1.0:1, and then 1% (mol %) of cadmium bromide (CdBr) is added. 2 ), put it into a quartz tube coated with carbon on the inner wall, and then vacuum the quartz tube (to 10 -3 Below torr) and encapsulate the quartz tube with an acetylene flame. Put the vacuum-encapsulated quartz tube in a high temperature furnace, raise it to 1100°C at 20°C / min, keep it for 12, and then cool it to normal temperature and take it out, thereby obtaining a chlorine-doped cadmium telluride polycrystalline material. The quartz tube cooled to room temperature is broken into pieces, and the chlorine-doped cadmium telluride polycrystalline material is taken out and ground to a powder with a particle size of 60 μm-180 μm. Hot-press sintering of the above-mentioned powder material, the sintering temperature is 880°C, the sintering pressure used is 60MPa, the heating rate is 50°C / min, and the holding time is ...

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Abstract

The invention provides a novel Cd-Te based thermoelectric material and a preparation method thereof. The Cd-Te matrix of the Cd-Te based thermoelectric material is doped with a halogen and/or a positive-trivalent metal element, and/or compounded with a conductive simple substance or a conductive compound or a combination of the conductive simple substance and the conductive compound. The preparation method comprises the following steps: heating Te, Cd, the doped raw material and/or the composite raw material under a vacuum high temperature condition to obtain a mixture, cooling the mixture, grinding the mixture to form powder, and sintering the powder to obtain the thermoelectric material. The novel thermoelectric material provided in the invention for the first time has the advantages of uniform element distribution, bulkiness, polycrystal, simple preparation technology and short preparation time.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to a Cd-Te-based thermoelectric material with good thermoelectric properties and a preparation method thereof. Background technique [0002] Thermoelectric material is a functional material that uses the transport of carriers and phonons in solids and their interactions to realize direct mutual conversion of thermal energy and electrical energy. Thermoelectric power generation or refrigeration devices made of thermoelectric materials are pollution-free, noise-free, wear-free, Small size, fast response, easy maintenance, safe and reliable, etc. As a new type of clean energy technology, thermoelectric conversion technology, especially its application to combined power generation of industrial waste heat or solar heat, is of great significance for improving energy utilization, developing circular economy, and building a conservation-oriented society. [0003] The level of therm...

Claims

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Application Information

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IPC IPC(8): C04B35/515C04B35/622H01L35/16
Inventor 吴萌蕾蒋俊肖昱琨徐静涛江浩川
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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