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Preparation method of carbon nanowalls

A carbon nanowall and carbon source gas technology, applied in the field of carbon nanometers, can solve problems such as complex process, high requirements for carbon nanowall equipment, and uneven thickness of carbon nanowall surface

Inactive Publication Date: 2013-12-04
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of carbon nanowalls in this plasma atmosphere requires high equipment requirements, relatively complicated processes, difficult conditions to control, and high production costs.
Moreover, when carbon nanowalls are prepared under a plasma atmosphere, the plasma reaction environment is constantly changing and unstable, resulting in uneven surface thickness of the prepared carbon nanowalls.

Method used

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  • Preparation method of carbon nanowalls
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Examples

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preparation example Construction

[0014] The example of the present invention provides a method for preparing carbon nanometer walls with easy controllable conditions, simple process and low cost. Please refer to the technical process of the preparation method of the carbon nanowall figure 1 , the method includes the following steps:

[0015] S01: Etching the metal substrate: etching the metal substrate with an acid solution with a concentration of 0.01 to 1mol / L;

[0016] S02: remove the air in the reaction chamber: place the metal substrate etched in step S01 in the reaction chamber, and remove the air in the reaction chamber;

[0017] S03: Reactive growth of carbon nanowalls: After heating the metal substrate placed in the reaction chamber to 700-1100° C., continuously inject a protective film with a volume ratio of 1:2-10 into the reaction chamber that excludes air. react with the mixed gas of inert gas and carbon source gas, and keep it for 1-300 minutes, and grow the carbon nanometer wall on the surfac...

Embodiment 1

[0027] A method for preparing a carbon nanowall, the specific steps are as follows:

[0028] S11: Put the iron foil into a dilute hydrochloric acid solution with a concentration of 0.01mol / L and etch for 180 seconds, and clean it with deionized water, ethanol, and acetone after etching;

[0029] S12: Put the cleaned iron foil into the reaction chamber and feed nitrogen gas with a flow rate of 10 sccm for 60 minutes;

[0030] S13: Heat the iron foil placed in the reaction chamber to 1100°C, and react with methane with a flow rate of 250 sccm, and grow carbon nanowalls on the surface of the iron foil, wherein, in the reaction chamber, the volume of methane and nitrogen gas The ratio is 5:1, keep it for 10 minutes;

[0031] S14: After the reaction is completed, stop feeding methane and heating the iron foil, stop feeding nitrogen after cooling the reaction chamber to room temperature, and obtain carbon nanowalls.

[0032] The carbon nanowall prepared in the present embodiment 1...

Embodiment 2

[0034] A method for preparing a carbon nanowall, the specific steps are as follows:

[0035] S21: Put the nickel foil into a dilute sulfuric acid solution with a concentration of 0.1mol / L to etch for 120 seconds, and clean it with deionized water, ethanol, and acetone after etching;

[0036] S22: Put the cleaned nickel foil into the reaction chamber and inject hydrogen gas at 200 sccm for 5 minutes;

[0037] S23: Heating the nickel foil to 700°C, passing 20 sccm of acetylene, the volume ratio of acetylene to hydrogen is 2:1, and keeping it for 300 minutes;

[0038] S24: After the reaction is completed, stop feeding the acetylene and heating the nickel foil, stop feeding the hydrogen gas after cooling the reaction chamber to room temperature, and obtain the carbon nanowall.

[0039] Electronic scanning of the carbon nanowalls prepared in this example showed that the carbon nanowalls had the same shape as the carbon nanowalls prepared in Example 1, which grew straight on the nick...

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Abstract

The invention discloses a preparation method of carbon nanowalls. The method comprises steps of etching a metal substrate with an acid solution having a concentration of 0.01-1 mol / L; placing the etched metal substrate into a reaction chamber, and eliminating air in the reaction chamber; and heating the metal substrate in the reaction chamber to 700-1100 DEG C, then continuously inletting a gas mixture containing a protective gas and a carbon source gas in a volume ratio of 1:2-10 into the reaction chamber that has eliminated air to perform a reaction, and maintaining for 1-300 min to grow the carbon nanowalls on the surface of the metal substrate. The preparation method adopts an etching and chemical vapor deposition two-step method to prepare the carbon nanowalls. The preparation method has simple preparation technology and easily controllable conditions. The preparation method is capable of shortening the etching time, improving the production efficiency, reducing the production cost, and effectively avoiding usage of plasma in the prior art to prepare the carbon nanowalls. The carbon nanowalls prepared by the method are dense.

Description

technical field [0001] The invention belongs to the technical field of carbon nanometers, and in particular relates to a preparation method of a carbon nanometer wall. Background technique [0002] The types of carbon materials include zero-dimensional fullerene (C60, etc.), one-dimensional carbon nanotubes, carbon nanofibers, etc., two-dimensional graphene, three-dimensional graphite, diamond, etc., carbon nanowall (carbon nanowall, CNW) It is a carbon nanostructure with two-dimensional diffusion. Its most typical morphology is a wall-like structure that grows perpendicular to the surface of the substrate material and is thicker than graphene. It is completely different from the characteristics of fullerene, carbon nanotubes, and graphene. , can be mainly used in solar cells, dye-sensitized cells, field emission and other fields. [0003] People began to study the preparation of carbon nanowalls before the discovery of graphene, but whether it is the early preparation meth...

Claims

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Application Information

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IPC IPC(8): C01B31/02B82Y40/00C01B32/15
Inventor 周明杰袁新生王要兵
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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