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Photomask blank and method for manufacturing photomask

一种光掩模坯料、硬掩模膜的技术，应用在图纹面的照相制版工艺、用于光机械处理的原件、半导体/固态器件制造等方向，能够解决增大膜厚、氟类干蚀刻蚀刻耐性降低等问题，达到蚀刻负荷减轻、高精度图案转印的效果

Active Publication Date: 2013-12-04
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0024] However, in such chromium-based materials rich in light elements / low in chromium composition, there is a problem that the etching resistance to fluorine-based dry etching is reduced, and the film thickness must be increased in order to ensure a sufficient function as a hard mask film.

Method used

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  • Photomask blank and method for manufacturing photomask
  • Photomask blank and method for manufacturing photomask
  • Photomask blank and method for manufacturing photomask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0152] A light-shielding film consisting of a light-shielding layer and an antireflection layer was formed on a quartz substrate using a DC sputtering device. As a light-shielding layer, a film (thickness: 41 nm) made of molybdenum, silicon, and nitrogen was formed on a quartz substrate.

[0153] Using MoSi 2 Both the target and the Si target were used as targets, and film formation was performed while rotating the quartz substrate at 30 rpm. In addition, using Ar and nitrogen as sputtering gases, adjustment was made so that the gas pressure in the chamber became 0.05 Pa.

[0154] The composition of the light-shielding film was examined by ESCA and found to be Mo:Si:N=1:3:1.5 (atomic ratio).

[0155] On this light-shielding layer, an antireflection layer (thickness: 10 nm) made of molybdenum, silicon, and nitrogen was formed using a DC sputtering device.

[0156] Using MoSi 2 Both the target and the Si target were used as targets, and film formation was performed while rot...

Embodiment 2

[0168] A halftone phase shift film (film thickness: 75 nm) composed of molybdenum, silicon, oxygen, and nitrogen was formed on a quartz substrate using a DC sputtering device.

[0169] Using MoSi 2 Both the target and the Si target were used as targets, and film formation was performed while rotating the quartz substrate at 30 rpm. In addition, using Ar, oxygen, and nitrogen as sputtering gases, adjustment was made so that the gas pressure in the chamber became 0.05 Pa.

[0170] The composition of the halftone phase shift film was examined by ESCA and found to be Mo:Si:O:N=1:4:1:4 (atomic ratio).

[0171] On this halftone phase shift film, an etching stopper film (thickness: 10 nm) made of CrSnON was formed using a DC sputtering device.

[0172]Film formation was performed while rotating the quartz substrate at 30 rpm using two types of the Cr target and the Sn target as targets. In addition, using Ar, nitrogen, and oxygen as sputtering gases, adjustment was made so that th...

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Abstract

A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Description

technical field [0001] The present invention relates to a photomask blank for photomasks used in the manufacture of semiconductor integrated circuits, etc., and in particular to a photomask blank provided with a hard mask film as a mask patterning auxiliary film, and the use of the photomask blank A method of manufacturing a photomask. Background technique [0002] In the field of semiconductor technology, research and development for further miniaturization of patterns are being conducted. Especially in recent years, with the high integration of large-scale integrated circuits, miniaturization of circuit patterns, thinning of wiring patterns, or miniaturization of contact hole patterns for interlayer wiring constituting memory cells (cells) has been carried out. etc., the requirements for microfabrication technology are increasing day by day. [0003] Accordingly, in the technical field of producing photomasks used in photolithography steps during microfabrication, develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/38G03F1/80
CPCG03F1/32G03F1/54G03F1/80G03F1/50G03F1/20G03F1/38H01L21/0273G03F1/26
Inventor 深谷创一中川秀夫笹本纮平
Owner SHIN ETSU CHEM CO LTD