TVS device and manufacturing method thereof

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as signal attenuation, and achieve the effect of low capacitance density

Active Publication Date: 2013-12-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The size of the capacitor is proportional to the current carrying capacity of the TVS, too large a capacitor will attenuate the signal

Method used

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  • TVS device and manufacturing method thereof
  • TVS device and manufacturing method thereof
  • TVS device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The structure of the TVS device of the present invention is as figure 1 As shown, there is a layer of P-type buried layer 102 on the P-type low-resistance substrate 101, and there is a P-type epitaxial layer 106 on the buried layer (it should be noted here that the epitaxial layer formed initially is lightly doped N-type Epitaxy, after heat treatment of the P-type buried layer 102 and upward diffusion, the inversion becomes P-type, please refer to the process description section for details).

[0041] In the P-type epitaxial layer 106, there are N-type isolation wells 105 and P-type isolation wells 107 arranged horizontally.

[0042] In the N-type isolation well 105, from bottom to top, there are a heavily doped N-type buried layer 103, an N-type epitaxial layer 104, and a heavily doped P-type region 108, and the heavily doped N-type buried layer 108 and the substrate 101 is in contact with the P-type buried layer 102, and the metal wiring 111 is connected to the heavi...

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Abstract

The invention discloses a TVS device which is provided with a low-resistivity substrate with high dosage concentration instead of diffusion separation. An epitaxial layer with low dosage concentration is formed on the low-resistivity substrate in a depositing mode to lower capacitance of the TVS device, a P-type buried layer is manufactured on the substrate through injection of indium, and the problem caused by boron impurity diffusion is effectively relieved. An N-type buried layer is manufactured after one time of low-dosage-concentration epitaxial deposition. Re-dosage is carried out on the two buried layers, the clamping voltage of the TVS device is regulated through dosage concentrations of buried layers of two different types, diffusion separation is used on the two sides of an active area, and an electrode is led out through buried layer connection. The invention further discloses a manufacturing method of the TVS device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a TVS device, and also relates to a manufacturing method of the TVS device. Background technique [0002] Transient interference of voltage and current is the main cause of damage to electronic circuits and equipment, and often brings incalculable losses to people. These disturbances usually come from the start-stop operation of power equipment, the instability of the AC power grid, lightning strike interference and electrostatic discharge, etc. The emergence of a high-efficiency circuit protection device TVS has effectively suppressed transient interference. TVS (Transient Voltage Suppressor) or transient voltage suppressor diode is a new product developed on the basis of Zener technology. Both TVS and Zener voltage regulator can be used for voltage regulation, but the breakdown current of Zener is higher. Small, the regulated voltage greater than 10V is only 1mA, re...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor石晶刘冬华钱文生胡君段文婷
OwnerSHANGHAI HUAHONG GRACE SEMICON MFG CORP