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Vertically-coupled surface-etched grating DFB laser

A surface grating and surface etching technology, applied in the design field of distributed feedback lasers, can solve problems such as affecting coupling efficiency and optical mode overlap scattering loss, and achieve the effect of simplifying manufacturing

Inactive Publication Date: 2013-12-18
ONECHIP PHOTONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition to the effective ridges, rounded corners and irregularities in these trenches can seriously affect the coupling efficiency and scattering loss of optical mode overlap as it occurs in the LC-SEG design taught by the prior art

Method used

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  • Vertically-coupled surface-etched grating DFB laser
  • Vertically-coupled surface-etched grating DFB laser
  • Vertically-coupled surface-etched grating DFB laser

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Embodiment Construction

[0043] The present invention aims to provide a device involving a SEG-DFB laser that increases the overlap between the guided optical mode propagating in the waveguide of the laser and the VC-SEG to facilitate the arrangement of an efficient DFB laser cavity, which in turn can be achieved by using side-coupled SEG Increase the laser performance and reduce the limitations of the existing technology, such as lower coupling efficiency, higher intracavity loss, and greater influence of SEG processing defects on coupling efficiency and intracavity loss.

[0044] The elements shown below are understood by reference to the numbering in the figures. The following discussion is exemplary in nature only and is not intended to limit the scope of the invention. The scope of the present invention is defined only by the claims and should not be construed as limited to the implementation details described below. It will be understood by those skilled in the art that said elements may be rep...

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Abstract

A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined / etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to the design of distributed feedback lasers used in photonic integrated circuits. Background technique [0002] III-V semiconductor laser diodes are the most efficient and compact sources of coherent radiation in the near-infrared range. Therefore, III-V semiconductor laser diodes are the best choice in optical communication systems based on silica fibers. The silica fiber has a transparent window into the emission range of these III-V semiconductor laser diodes. However, the basic principle for obtaining optical gain is the same for all laser diodes and is related to the inversion of the free carrier population caused by the input current into the forward biased PIN junction. The difference in semiconductor laser design is mainly in the solution of the optical cavity. One of the most common and preferred solutions is a distributed feedback (DFB) cavity. DFB cavities bring m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01L33/00
CPCH01S5/0208H01S5/0422H01S5/1231H01S5/1237H01S5/2018H01S5/2045H01S5/2081H01S5/22H01S5/2232
Inventor 克里斯托弗·沃特森基里尔·皮梅诺夫瓦莱丽·托斯汀基吴芳尤芮·隆戈维
Owner ONECHIP PHOTONICS
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