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Method for preparing bismuth-doped lead sulfide or cadmium sulfide cosensitizer for solar battery

A technology of solar cells and lead sulfide, applied in the field of solar energy, to achieve the effects of improving light absorption characteristics, enhancing photoelectric conversion characteristics, and improving light absorption characteristics

Inactive Publication Date: 2014-01-01
BEIJING INFORMATION SCI & TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, the preparation of PbS semiconductor quantum dots in the PbS / CdS co-sensitizer used in sensitized solar cells by the SILAR method is not yet done by doping the main group metal element-bismuth (Bi) element to improve the short-circuit current of QDSC. No report

Method used

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  • Method for preparing bismuth-doped lead sulfide or cadmium sulfide cosensitizer for solar battery
  • Method for preparing bismuth-doped lead sulfide or cadmium sulfide cosensitizer for solar battery
  • Method for preparing bismuth-doped lead sulfide or cadmium sulfide cosensitizer for solar battery

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Embodiment 1

[0037] The specific steps of the bismuth-doped lead sulfide / cadmium sulfide quantum dot co-sensitizer for sensitizing solar cells and the preparation method are as follows:

[0038] 1) Equipped with Pb(NO at a concentration of 0.05M 3 ) 2 Solution, placed on a magnetic stirrer and magnetically stirred for 30-60min;

[0039] 2) BiCl 3 Soluble salt is added to the Pb(NO 3 ) 2 In solution, BiCl 3 with Pb(NO 3 ) 2 The mass molar concentration ratio is 1:1.

[0040] 3) Put the solution obtained in step 2) into a water bath at 20-50°C for 30 minutes of constant temperature ultrasonication;

[0041] 4) Equipped with Na with a concentration of 0.05M 2 S solution, placed in a water bath at 20-50°C, and ultrasonicated at a constant temperature for 20-60min;

[0042] 5) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 1 min, take it out and rinse it with the corresponding solvent, and dry it with nitrogen;

[0043] 6) Immerse the ...

Embodiment 2

[0049] The specific steps of the bismuth-doped lead sulfide / cadmium sulfide quantum dot co-sensitizer for sensitizing solar cells and the preparation method are as follows:

[0050] 1) Equipped with Pb(NO at a concentration of 0.05M 3 ) 2 Solution, placed on a magnetic stirrer and magnetically stirred for 30-60min;

[0051] 2) BiCl 3 Soluble salt is added to the Pb(NO 3 ) 2 solution, in which BiCl 3 with Pb(NO 3 ) 2 The mass molar concentration ratio is 1:100.

[0052] 3) Put the solution obtained in step 2) into a water bath at 20-50°C for 30 minutes of constant temperature ultrasonication;

[0053] 4) Equipped with Na with a concentration of 0.05M 2 S solution, placed in a water bath at 20-50°C, and ultrasonicated at a constant temperature for 20-60min;

[0054] 5) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 1 min, take it out and rinse it with the corresponding solvent, and dry it with nitrogen;

[0055] 6) Imme...

Embodiment 3

[0061] The specific steps of the bismuth-doped lead sulfide / cadmium sulfide quantum dot co-sensitizer for sensitizing solar cells and the preparation method are as follows:

[0062] 1) Equipped with Pb(NO at a concentration of 0.05M 3 ) 2 Solution, placed on a magnetic stirrer and magnetically stirred for 30-60min;

[0063] 2) BiCl 3 Soluble salt is added to the Pb(NO 3 ) 2 In solution, BiCl 3 with Pb(NO 3 ) 2 The mass molar concentration ratio is 1:1000.

[0064] 3) Put the solution obtained in step 2) into a water bath at 20-50°C for 30 minutes of constant temperature ultrasonication;

[0065] 4) Equipped with Na with a concentration of 0.05M 2 S solution, placed in a water bath at 20-50°C, and ultrasonicated at a constant temperature for 20-60min;

[0066] 5) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 1 min, take it out and rinse it with the corresponding solvent, and dry it with nitrogen;

[0067] 6) Immerse t...

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Abstract

The invention relates to a bismuth-doped lead sulfide or cadmium sulfide quantum dot cosensitizer for a sensitized solar battery and a preparation method thereof. According to the method, the bismuth-doped lead sulfide or cadmium sulfide quantum dot cosensitizer for the sensitized solar battery is prepared by doping Bi impurities in PbS. The advantage of narrow band clearance of PbS is kept, and simultaneously, the light absorption character of PbS is improved through doping Bi impurities in PbS. Compared with the undoped cosensitizer, the Bi-doped PbS / CdS cosensitizer has the advantages that the light absorption character is improved, and the photovoltaic conversion characteristic is relatively enhanced obviously; therefore, compared with the undoped sensitized solar better, the sensitized solar battery prepared by the Bi-doped PbS / CdS cosensitizer is obviously improved in short circuit current, so that the energy conversion efficiency of the sensitized solar battery is further improved.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and more specifically relates to a co-sensitizer for sensitizing solar cells mainly doped with lead sulfide quantum dots and a preparation method. Background technique [0002] Solar energy is used to replace the fossil energy that is about to be exhausted due to its cleanness, pollution-free, abundant reserves and no geographical restrictions, and can solve the impact of China's low-carbon economy. Among various new types of solar cells, dye-sensitized solar cells (DSSC) have become a research hotspot due to their low cost, simple manufacturing process, and relatively high photoelectric conversion efficiency (O'Regan, B., M., Nature, 1991, 353, 737. As a branch of DSSC, quantum dot-sensitized solar cells (QDSC) are also flourishing (A.J.Nozik, A.J.Nozik / Physica E14 (2002) 115-120). QDSC uses a wide-bandgap semiconductor nanocrystalline film adsorbed with semiconductor quantum dots as the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/032
Inventor 邹小平高彦艳
Owner BEIJING INFORMATION SCI & TECH UNIV