Horizontal high-voltage super junction power semiconductor device

A power semiconductor and lateral high voltage technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of N/P charge imbalance of lateral superjunction devices, so as to overcome adverse effects and reduce specific conduction Resistance, the effect of improving the withstand voltage of the device

Active Publication Date: 2014-01-01
UNIV OF ELECTRONIC SCI & TECH OF CHINA +1
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of N/P charge imbalance in lateral superjunction devices caused by the substrate-assisted depletion effect, the present invention proposes a charge-compensated lateral high-voltage power semiconductor device, which introduces an N-type substrate between the P-type substrate layer and the superjunction layer. For the charge compensation layer, the compensation layer and the P-type substrate are regarded

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Horizontal high-voltage super junction power semiconductor device
  • Horizontal high-voltage super junction power semiconductor device
  • Horizontal high-voltage super junction power semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0022] The technical solution of the present invention will be described in detail below in conjunction with the drawings:

[0023] Such as figure 1 Shown is a traditional lateral high voltage super junction power semiconductor device, and its cell structure includes a P-type substrate 1, an N-type strip region 3, a P-type strip region 4, a P-type body region 5, and an N-type heavily doped source region. 6. P-type heavily doped region body region 7, gate oxide layer 8, N + The drain region 9, the drain contact electrode 10, the polysilicon gate 11, the source contact electrode 12, and the substrate contact electrode 13; the N-type stripe regions 3 and the P-type stripe regions 4 are longitudinally staggered along the upper surface of the P-type substrate 1 Arranged to form a super junction structure, the P-type body region 5 is provided at one end of the upper surface of the P-type substrate 1 and connected to the super junction structure, and the N + The drain region 9 is arrang...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a power semiconductor technique, in particular to a charge-compensation horizontal high-voltage super junction power semiconductor device. According to the horizontal high-voltage super junction power semiconductor device, the surface of a P type substrate layer is covered by an N type charge compensation layer. The N type charge compensation layer comprises various doping method of uniform doping, linear doping, disperse doping and the like. The linear doping can obviously reduce the auxiliary exhaust function of a substrate. The horizontal high-voltage super junction power semiconductor device has the advantages of using an injection selection function to adjust the doping concentration based on the linear doping to obtain an optimized doping method, fully takes ideal substrate conditions and charge balance conditions of equivalent substrates into consideration, well overcomes the effects of the auxiliary exhaust functions of substrates and enables a super junction LDMOS to achieve the optimal pressure resistance. The horizontal high-voltage super junction power semiconductor device is especially applied to the field of horizontal high-voltage super junction power semiconductor devices.

Description

technical field [0001] The invention relates to power semiconductor technology, in particular to a charge-compensated lateral high-voltage super-junction power semiconductor device. Background technique [0002] With the rapid development of semiconductor technology, power MOSFET devices have been widely used for their advantages such as low driving power, fast switching speed, no secondary breakdown, negative temperature coefficient and good thermal stability. But in high-voltage applications, the specific on-resistance R of conventional power MOSFETs on，sp (Specific On-resistance) increases with the 2.5th power of the breakdown voltage BV (Breakdown Voltage), which hinders the development of devices. The proposal of the Super Junction SJ (Super Junction) structure breaks the theoretical limit of the traditional MOSFET, and has a lower conduction loss while maintaining all the advantages of the power MOS. [0003] The lateral double-diffused metal oxide semiconductor LDMO...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/78H01L29/06H01L29/10
CPCH01L29/0634H01L29/7816H01L29/0878H01L21/266
Inventor 乔明章文通黄军军张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap