Method for conducting magneto-rheological thinning and polishing on InP-based RFIC wafer

A thinning polishing and magnetorheological technology, applied in the field of InP RFIC preparation, can solve problems such as physical damage of InP substrate extrusion stress, and achieve the effects of avoiding distortion of machining accuracy, good elasticity and fast speed

Inactive Publication Date: 2014-01-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0007] In view of this, the main purpose of the present invention is to provide a method for magnetorheological thinning and polishin

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  • Method for conducting magneto-rheological thinning and polishing on InP-based RFIC wafer
  • Method for conducting magneto-rheological thinning and polishing on InP-based RFIC wafer

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[0020] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0021] Such as figure 1 As shown, figure 1 It is a flow chart of a method for magnetic rheological thinning and polishing of InP-based RFIC wafers according to an embodiment of the present invention. The method includes the following steps:

[0022] Step 1: Bond the InP-based RFIC wafer to the UV film:

[0023] In this step, the InP-based RFIC wafer to be thinned is placed on the UV mucosa, placed on the hot plate, the temperature of the hot plate is 60℃, and the temperature is 2×10 -2 Under mabr vacuum, apply 0.6bar pressure on the InP-based RFIC wafer for bonding, and the bonding time is 20 minutes.

[0024] Step 2: Immerse the side of the InP-based RFIC wafer that needs to be polished into the oil-based polishing solution...

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Abstract

The invention discloses a method for conducting magneto-rheological thinning and polishing on an InP-based RFIC wafer. The method comprises the InP-based RFIC wafer and a UV film bond with each other, wherein one surface, needing to be polished, of the InP-based RFIC wafer is vertically soaked in an oil-based polishing solution downwards, and magneto-rheological thinning and polishing are conducted; the polished InP-based RFIC wafer is cleaned; the InP-based RFIC wafer is separated from the UV film. By the magneto-rheological polishing method, extrusion stress on the InP-based RFIC wafer is reduced in a polishing process, and physical damage is greatly reduced. Under the action of a magnetic field, the polishing solution is high in fluid viscosity and good in elasticity, and is tightly attached to the InP-based RFIC wafer, machining precision distortion caused by deformation errors of a polishing disk in the conventional CMP process is avoided, and a very good polishing effect on the InP-based RFIC wafer is formed. The whole magneto-rheological process is stable, speed is high, controllability is good, multiplicity is high, and no dust pollution is caused. By means of polishing, the thickness of a substrate is 20 microns finally, and the surface Ra is less than 2nm.

Description

technical field [0001] The invention relates to the technical field of InP RFIC preparation, in particular to a method for performing magnetorheological thinning and polishing on an InP-based radio frequency integrated circuit (Radio Frequency Integrated Circuit, RFIC) wafer. Background technique [0002] With the continuous application of high technology in the military field, the frequency of radio frequency microwave signals is getting higher and higher, the frequency band is getting wider and wider, and the processing capability of digital chips is getting stronger and stronger. Modern warfare has gradually entered the information age and digital age. The rapid development of electronic devices makes the transmission rate of signals faster and faster. With its excellent frequency characteristics, III-V compounds, their semiconductor devices and related ultra-high-speed digital / digital-analog hybrid circuits are becoming increasingly popular in military communications, rad...

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Application Information

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IPC IPC(8): B24B1/00
CPCB24B1/005
Inventor 汪宁
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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