Light-emitting diode and manufacturing method thereof

Abstract

The invention provides a light-emitting diode and a manufacturing method of the light-emitting diode. The manufacturing method of the light-emitting diode comprises the steps that an N-GaN layer, a quantum well layer and a P-GaN layer are sequentially formed on a semiconductor substrate, a plurality of hole tunnels reaching the N-GaN layer are formed through etching, an insulation inner wall is manufactured, meanwhile, an insulation layer is manufactured on the P-GaN layer, an insulation structure in bridge connection with each hole tunnel is obtained through etching, the hole channels are filled with an electrode material so that the hole channels can be in ohmic contact with the N-GaN layer, transparent conductive layers with the thickness smaller than that of each insulation structure are formed in the upper surfaces of the insulation structures and the portions, uncovered by the insulation structures, of the surface of the P-GaN layer respectively, and therefore manufacturing is accomplished. According to the light-emitting diode and the manufacturing method of the light-emitting diode, traditional linear N electrodes are replaced by point-shaped N electrodes, so that the brightness of the light-emitting diode is effectively improved, the point-shaped electrodes are beneficial to diffusion of chip current under a large current, the current density can be distributed more evenly, the light-emitting efficiency of the light-emitting diode is effectively improved, and the service life of the light-emitting diode is prolonged. The light-emitting diode and the manufacturing method of the light-emitting diode are simple in manufacturing technology, remarkable in effect and suitable for industrial production.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its cor...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a light-emitting diode and a manufacturing method thereof, which are used to solve the problem of reducing the luminous brightness of the light-emitting diode and the uneven current density distribution caused by the preparation of linear N electrodes in the prior art. Uniformity, resulting in the problem of reduced luminous efficiency and shortened life of light-emitting diodes

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