Light-emitting diode of vertical structure and manufacturing method thereof

Abstract

The invention provides a light-emitting diode of a vertical structure and a manufacturing method thereof. An N-GaN layer, a quantum well layer, a P-GaN layer and a first transparent conductive layer are sequentially formed on a semi-conductor substrate, a plurality of pore channels are etched, an insulating sidewall is prepared, meanwhile, an insulating layer is prepared on the first transparent conductive layer, the pore channels are filled with electrode materials so as to form Ohmic contact with the N-GaN layer, meanwhile, an electrode material layer is formed on the insulating layer, then the electrode material layer and a conductive supporting substrate are bonded, the conductive supporting substrate is the N electrode portion of a chip, the semi-conductor substrate is peeled off, etching is carried out from the N-GaN layer to the first transparent conductive layer, and ultimately a P electrode is prepared and preparation is finished. An electrode at the side different from the vertical structure side is manufactured on the same side of the chip, and the process is simplified. The point-shaped electrodes facilitate diffusion of currents of the chip under large currents so that density distribution of the currents is uniform, the light-emitting efficiency of the light-emitting diode is effectively improved, and service life of the light-emitting diode is prolonged.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a vertical structure light emitting diode and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, ...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a vertical structure light-emitting diode and its manufacturing method, which is used to solve the problem of complex preparation process of electrodes on different sides and linear N electrodes leading to the luminous brightness of the light-emitting diode in the prior art. Reduced, uneven distribution of current density, resulting in reduced luminous efficiency and shortened life of light-emitting diodes

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