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68results about How to "Uniform distribution of current density" patented technology

Flip LED chip array structure and preparation method thereof

The invention discloses a flip LED chip array structure. The flip LED chip array structure comprises a transparent substrate made of a transparent material; a buffer layer arranged on one surface of the transparent substrate; an N-type semiconductor structural layer and a P-type semiconductor structural layer formed on the buffer layer; a current diffusion layer made of a conductive material; a passivation layer arranged above the P-type semiconductor structural layer, made of a transparent insulating material, and covering the current diffusion layer, the P-type semiconductor structural layer, and the N-type semiconductor structural layer; a plurality of N-type electrode window regions arranged in an array manner and contacted with the N-type semiconductor structural layer; and P-type electrode window regions contacted with the P-type semiconductor structural layer. The N-type electrode window regions are provided with N-type electrodes, the P-type electrode window regions are provided with P-type electrodes, and the heights of the P-type electrodes and the N-type electrodes are the same. According to the flip LED chip array structure, the effective light-emitting area of the high-power LED chip is increased, the effective contact area between the chip electrodes and the heat radiation substrate is increased, the heat radiation effect is better, and the service lifetime of the chip is prolonged.
Owner:苏州瑞而美光电科技有限公司

Spliced board process side and board splicing method

The invention discloses a spliced board process side and a board splicing method. The spliced board process side is arranged at the periphery of the pattern units of a circuit board. The spliced boardprocess side comprises at least two layers of laminated process sides. Each layer of process side is provided with balance copper points, and the residual copper rate of each layer of process side isthe same with the residual copper rate of the pattern units of the corresponding layer. The spliced board of the board splicing method comprises the spliced board process side and the pattern units and test strips or test modules which are arranged in the spliced board process side. According to the spliced board process side, the residual copper rate of each layer is the same with the residual copper rate of the pattern units of the corresponding layer so that the consistency of the dielectric layer thickness of the spliced board process side and the pattern units after lamination and glue filling can be guaranteed, the board thickness consistency of the spliced board can be enhanced, the current density distribution of the spliced board process side and the pattern units in electroplating is ensured to be more uniform, the accuracy of the test result of the test strips or the test modules arranged in the process side can be enhanced and the relevant real value of the pattern units can be effectively represented.
Owner:GUANGZHOU FASTPRINT CIRCUIT TECH +2

LED (Light-Emitting Diode) chip and production method thereof

The invention provides an LED (Light-Emitting Diode) chip and a production method thereof. The LED chip comprises a substrate, an N-type semiconductor layer located on the substrate, a light-emitting layer, a P type semiconductor layer, and N electrodes and P electrodes which are electrically connected with the N-type semiconductor layer and the P type semiconductor layer. The LED chip also comprises an N type table surface and a plurality of N type electrode slots which are etched to the N-type semiconductor layer. Insulation dielectric layers crossing the N type electrode slots are arranged on the side walls of the N type electrode slots and above the P type semiconductor layer. First transparent conductive layers connected with the bottoms of the N type electrode slots and electrically connected with the N-type semiconductor layer are formed in the insulation dielectric layers. A first N electrode is arranged on the N type table surface. Second N electrodes are arranged in the first transparent conductive layers of the N type electrode slots. The first N electrode and the second N electrodes are electrically connected through the first transparent conductive layers. According to the LED chip provided by the invention, the current density distribution is even, the light-emitting performance of the LED chip is improved; the area of an active layer is increased effectively; and the light-emitting efficiency of the chip is improved.
Owner:FOCUS LIGHTINGS SCI & TECH

Proton exchange membrane fuel cell bipolar plate based on symmetrical serpentine structure flow field

The invention discloses a proton exchange membrane fuel cell bipolar plate based on a symmetrical serpentine structure flow field. The bipolar plate comprises a gas flow field (1) and is characterizedin that the gas flow field (1) is symmetrically distributed in a serpentine shape; a reaction gas inlet (2) and a generated product outlet (10) of the gas flow field (1) are respectively positioned at two ends of one diagonal line of the gas flow field (1) and are diagonally distributed, and a ridge (3) positioned in a connecting line of the reaction gas inlet (2) and the generated product outlet(10) divides a flow channel starting from the reaction gas inlet (2) into two parts of snake-shaped flow channels which are symmetrically arranged. Compared with a traditional snakelike flow field, the symmetrical snakelike structure flow field overcomes the defect that the pressure drop of the snakelike flow field is large, enhances the gas transmission performance, enables the gas distributionto be more uniform, improves the generated water discharge performance of the fuel cell, enables the overall current density distribution to be more uniform, and thus improves the overall performanceof the fuel cell.
Owner:NANJING UNIV OF TECH

Lead-silicon composite bipolar battery

The invention discloses a lead-silicon composite bipolar battery, belongs to the technical field of storage batteries, and solves the problems of high current density, non-uniform distribution, low gravimetric specific energy and short battery cycle life of a busbar and a pole of an existing lead-acid storage battery. Technical characteristics are as follows: the lead-silicon composite bipolar battery comprises a pole group for the lead-silicon composite bipolar battery, and also comprises a fastening screw, a first battery shell, a second battery shell, a third battery shell, a fourth batteryshell, a fifth battery shell and a battery inner cavity. According to the lead-silicon composite bipolar battery provided by the invention, the current density distribution is uniform during working,the hot spots on the surface of a pole plate are uniformly distributed, the heat management performance of the battery is better than that of the existing storage battery, and the acid corrosion resistance of a silicon wafer is strong. Compared with an existing lead-acid storage battery, the lead consumption of the lead-silicon composite bipolar battery with the same capacity can be reduced by about 40%. Under the same use condition (80%-100% DOD), the cycle life can be prolonged by 2-5 times.
Owner:ZHAOQING LEOCH BATTERY TECH +1

High-power thyristor

ActiveCN103094333AReduce on-state power consumptionOpen fastThyristorCapacitanceAverage current
The invention discloses a high-power thyristor which comprises a silicon wafer, the silicon wafer is provided with unit cell gate poles, each unit cell gate pole comprises a central gate pole and an amplification gate pole, each central gate pole is located at the dead center of each amplification gate pole, the silicon wafer is provided with at least seven unit cell gate poles, and any three adjacent unit cell gate poles are distributed on the silicon wafer in a regular triangle shape. A plurality of small-size unit cell gate poles are installed on the silicon wafer of the high-power thyristor, multiple-unit cell structure gate poles are formed on the surface of the silicon wafer of the high-power thyristor, a plurality of parasitic resistors and a plurality of working areas which are small in capacitance are built on the surface of the silicon wafer, so that the thyristor which is large in size has the same working properties with a thyristor which is small in size, and the high-power thyristor has the advantages of being high in starting speed, even in current density distribution, high in on-state average current density, low in on-state voltage-drop, and low in on-state power consumption. Therefore, by means of the technical scheme, switching operation which is good in performance can be achieved on the high-power thyristor which is larger in size.
Owner:HANGZHOU HANAN SEMICON

Cathode line welding equipment

The invention relates to the field of cathode line processing equipment, and in particular to cathode line welding equipment. The cathode line welding equipment comprises a rack, and a feeding assembly and a welding assembly which are arranged on the rack, wherein the welding assembly is arranged on a feeding line of the feeding assembly, an internal clamping device is arranged at the upstream of the welding assembly, and an external clamping device is arranged at the downstream of the welding assembly; the feeding assembly comprises a sliding rail on the rack and a feeding device arranged on the sliding rail in a sliding manner, and the feeding device, the internal clamping device and the external clamping device are arranged on one central axis; the welding assembly comprises six groups of welding components, which are circumferentially arranged in an array with the central axis as a center and are distributed spirally along the axial direction of the central axis, and the axial direction of the welding ends of two groups of welding components opposite to each other in the radial direction is equal to the axial length of half welding cycle of a cathode line to be welded. The special cathode line welding machine adopts a semi-automation production process, realizes automatic feeding and welding, and can be used for producing cathode lines quickly and efficiently.
Owner:ZHEJIANG TIANCHUANG ENVIRONMENTAL TECH CO LTD

A high power thyristor

ActiveCN103094333BReduce on-state power consumptionOpen fastThyristorCapacitanceAverage current
The invention discloses a high-power thyristor which comprises a silicon wafer, the silicon wafer is provided with unit cell gate poles, each unit cell gate pole comprises a central gate pole and an amplification gate pole, each central gate pole is located at the dead center of each amplification gate pole, the silicon wafer is provided with at least seven unit cell gate poles, and any three adjacent unit cell gate poles are distributed on the silicon wafer in a regular triangle shape. A plurality of small-size unit cell gate poles are installed on the silicon wafer of the high-power thyristor, multiple-unit cell structure gate poles are formed on the surface of the silicon wafer of the high-power thyristor, a plurality of parasitic resistors and a plurality of working areas which are small in capacitance are built on the surface of the silicon wafer, so that the thyristor which is large in size has the same working properties with a thyristor which is small in size, and the high-power thyristor has the advantages of being high in starting speed, even in current density distribution, high in on-state average current density, low in on-state voltage-drop, and low in on-state power consumption. Therefore, by means of the technical scheme, switching operation which is good in performance can be achieved on the high-power thyristor which is larger in size.
Owner:HANGZHOU HANAN SEMICON

Electroplating processing device for inner bore and end faces of workpiece

The invention provides an electroplating processing device for an inner bore and end faces of a workpiece. The inner bore is formed in the processed workpiece in the length direction; a processing device includes an anode bar, and the axis direction of the anode bar is defined as a first direction; the processing device further includes a fastening structure, and a first anode plate, a first fixing piece, a second fixing piece and a second anode plate which are sequentially arranged on the anode rod in a sleeving manner in the first direction; the first fixing piece and the second fixing pieceare arranged at an interval; a first through hole is formed in the first fixing piece; and when the processed workpiece is arranged on the anode bar in a sleeving manner and is contained in a first space, the inner wall face of the first through hole is located at the outer side of the boundary of the inner bore in a first end face, and a gap is present between the first anode plate and the firstend face as well as between the second anode plate and a second end face. The electroplating processing device can change the distribution of power lines in the electroplating process of the workpiece, and thus, uniform distribution of the current density of the electroplated surface of the workpiece is promoted, plating is evenly deposited on the surface of the workpiece, so that chromium plating of multiple parts of the inner bore and the end faces is completed at a time.
Owner:LANDING GEAR ADVANCED MFG
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