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A radiation dose detector with MOS structure and its preparation method

A MOS structure and radiation dose technology, applied in the field of electromagnetic detection technology, can solve problems such as high voltage, high temperature, and low current, and achieve the effect of increasing the measurement current and improving the sensitivity of the device

Inactive Publication Date: 2016-01-13
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the existing MOS radiation dose detectors currently have very small currents when measuring, and the voltage and temperature required for the measurement are high, which greatly increases the difficulty of measurement.

Method used

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  • A radiation dose detector with MOS structure and its preparation method
  • A radiation dose detector with MOS structure and its preparation method
  • A radiation dose detector with MOS structure and its preparation method

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Embodiment Construction

[0036] Below in conjunction with accompanying drawing, the present invention is described in further detail by embodiment:

[0037] Such as figure 1 , the radiation dose detector with MOS structure prepared in this embodiment is divided into four material layers, the uppermost layer is the top electrode I, followed by the composite silicon dioxide layer II, the silicon substrate III, and the bottom layer is the bottom electrode IV . Composite silicon dioxide layer II is further divided into thermal oxide layer 1 and deposition layer 2.

[0038] The radiation dose detector of the above-mentioned MOS structure is prepared according to the following method:

[0039] 1) Take a single crystal silicon wafer (double-thrown silicon wafer, 400 μm, N-type doping, 100 crystal orientation) as the silicon substrate III, and perform photolithography and etching on the silicon substrate III to form a silicon column structure, that is, patterning Silicon Substrate III.

[0040] The etchin...

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PUM

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Abstract

The invention discloses a radiation dosage detector of a MOS structure and a preparation method of the radiation dosage detector. The radiation dosage detector sequentially comprises a top electrode, a composite oxidization layer, a substrate and a bottom electrode from top to bottom, wherein the composite oxidization layer comprises a thermal oxidation layer and a depositing layer. Because the composite oxidization layer is a structure prepared according to etching and depositing technologies, the MOS structure of the radiation dosage detector is provided with the oxidization layer high in defect concentration and large in thickness. Due to the utilization of the radiation dosage detector of the MOS structure, a large current can be acquired under a low voltage during measurement, sensitivity is improved, and measurement difficulties are reduced.

Description

technical field [0001] The invention relates to a radiation dose detector, in particular to a radiation dose detector with a MOS (metal-oxide-semiconductor) structure with a high-defect oxide layer, which belongs to the electromagnetic detection technology in micro-mechanical electronic systems. Background technique [0002] The radiation environment widely exists in people's production, life and research: in the space environment, there are Van Allen radiation belts surrounding the earth and various cosmic rays; in the laboratory there are different radioactive elements used in experiments; in nuclear power plants, medical institutions and other facilities There are also many radioactive sources. To understand the nature of these radiation environments, radiation detectors are an important choice. How to manufacture a radiation detector with a suitable range and sensitivity is also an issue that many researchers are actively discussing. The traditional chemical radiation ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/24
Inventor 张锦文杨钰淏
Owner PEKING UNIV