Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composite film and production method thereof as well as photoelectric element and photoelectric device

A manufacturing method and composite thin film technology, applied in the direction of electrical components, electrical solid devices, chemical instruments and methods, etc., can solve problems such as quenching, quantum dot agglomeration fluorescence, etc., achieve good uniformity, wide selectivity, and avoid fluorescence quenching The effect of killing

Active Publication Date: 2014-01-22
BOE TECH GRP CO LTD
View PDF1 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is a thin film that emits white light, which is obtained by mixing quantum dots of different colors, but when white light is realized, agglomeration and fluorescence quenching are prone to occur between quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite film and production method thereof as well as photoelectric element and photoelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them.

[0026] Embodiments of the present invention provide a method for making a composite film, such as figure 1 Shown, described preparation method comprises the following steps:

[0027] S1. Prepare a polyfluorene compound solution.

[0028] Optionally, the solvent in the polyfluorene compound solution includes toluene, chlorobenzene or chloroform, preferably, the solvent in the polyfluorene compound solution includes toluene; the solute in the polyfluorene compound solution For polyfluorene or polyfluorene derivatives. The concentration of the polyfluorene compound solution is 3%-25%.

[0029] Optionally, the polyfluorene derivatives include: P17 (poly(9,9-dialkylfluorene)), P18 (copolymer of dihe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a composite film and a production method thereof as well as a photoelectric element and a photoelectric device, and relates to the field of manufacturing. The composite film has the advantage that the phenomena such as the agglomeration and the fluorescence quenching can be avoided. The composite film production method comprises the following steps: preparing a polyfluorene compound solution which comprises polyfluorene or polyfluorene derivatives; preparing a quantum dot solution; mixing the polyfluorene compound solution and the quantum dot solution together so as to prepare a mixed solution; removing a solvent in the mixed solution, and preparing the composite film.

Description

technical field [0001] The invention relates to the field of production, in particular to a composite thin film and a production method thereof, a photoelectric element and a photoelectric device. Background technique [0002] At present, the application of composite films in display and lighting will become a new direction for future display and lighting technologies. As we all know, white light is obtained by combining colors such as red, green, blue, and yellow. Usually, various colors are realized by their corresponding light-emitting materials, and these materials can realize white light through co-doping. [0003] In recent years, a new type of semiconductor nanomaterialsquantum dots (quantum dots), also known as semiconductor nanocrystals, has emerged with a size of 1-10nm. Due to the quantum size effect and dielectric confinement effect, quantum dots have unique photoluminescence and electroluminescence properties. Compared with traditional organic fluorescent dye...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/06C09K11/08C09K11/88C09K11/89H01L33/50H01L51/54
CPCC08G61/02C08K3/30C08G2261/1412C08G2261/3142C08G2261/5222C08G2261/95C08K2003/3036H10K71/12H10K85/115H10K50/115C08L65/00C09K11/565H01L33/06B05D1/005C09K2211/1416C09K11/06
Inventor 谷敬霞唐琛
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products