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Schottky device provided with groove terminal structures and preparation method thereof

A technology of terminal structure and Schottky potential, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve complex manufacturing process and other problems, achieve the effect of simplifying the manufacturing process and improving high-frequency characteristics

Active Publication Date: 2014-01-22
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is the planar layout, the traditional planar Schottky diode has a relatively complicated manufacturing process, and three photolithography etching processes are required to complete the production and manufacture of the device

Method used

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  • Schottky device provided with groove terminal structures and preparation method thereof
  • Schottky device provided with groove terminal structures and preparation method thereof
  • Schottky device provided with groove terminal structures and preparation method thereof

Examples

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Embodiment 1

[0020] figure 1 It is a sectional view of a Schottky device with a single trench termination structure of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0021] A Schottky device with a trench terminal structure, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; Schottky barrier junction 5, located on the surface of the first conductive semiconductor material 3, is a silicide formed by semiconductor silicon material and barrier metal; silicon dioxide 2, located on the inn...

Embodiment 2

[0032] image 3 It is a cross-sectional view of a Schottky device with multiple trench termination structures of the present invention, combined below image 3 The semiconductor device of the present invention will be described in detail.

[0033] A Schottky device with a trench terminal structure, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; Schottky barrier junction 5, located on the surface of the first conductive semiconductor material 3, is a silicide formed by semiconductor silicon material and barrier metal; silicon dioxide 2, located on ...

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Abstract

The invention discloses a Schottky device provided with groove terminal structures. The semiconductor device provided by the invention is provided with a terminal with the groove structures, so that the distribution of the edge potential of the device is changed, and the manufacturing processes of the device are simplified. By adopting a photoetching process for two times, production and manufacturing of the device are realized.

Description

technical field [0001] The invention relates to a Schottky device with a trench termination structure, and also relates to a preparation method for the Schottky device with a trench termination structure. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is the planar layout, the traditional planar Schottky diode has a relatively complicated manufacturing process, and three photolithographic etching processes are required to complete the production and manufacture of the device. Contents of the invention [0004] In view of the above problems, the present invention provides...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/40H01L29/872H01L21/28H01L21/329
CPCH01L29/407H01L29/66143H01L29/872
Inventor 朱江
Owner 北海惠科半导体科技有限公司