Dumet wire microwave heating production system

Abstract

The invention discloses a Dumet wire microwave heating production system which comprises a wire feeder, a microwave sintering furnace, a microwave oxidizing furnace, a wire passing device and a wire collector, wherein the wire feeder is sequentially connected with the microwave oxidizing furnace and the microwave sintering furnace in a wire feed mode; the microwave sintering furnace is connected with the wire collector in a wire collection mode; and the on-off state of microwave generators of the microwave sintering furnace and the microwave oxidizing furnace is respectively controlled by the wire passing state of the wire passing device. The wire feed speed, heating temperature and oxidizing temperature of the Dumet wire material is controlled to ensure the quick generation of CuO-free high-purity nano Cu2O; and a wire press device is matched to implement idle shutdown protection, thereby implementing digital control on the whole process. The Dumet wire microwave heating production system has the advantages of simple structure, reliable performance, high energy utilization, low use cost and the like, and is convenient to operate; and the Dumet wire material prepared by the system has no CuO generated on the outer layer, does not have color difference or bubbles in the subsequent platinum glass head seal process, and has high quality property.

Description

technical field [0001] The invention relates to a Dumet wire manufacturing system, in particular to a Dumet wire with a copper-plated layer of an iron-nickel alloy to rapidly generate Cu by using microwave heating, oxidation and sintering. 2 Dumet silk microwave heating production system at O ​​level. Background technique [0002] Ordinary red, yellow, boron-free Dumet wire, when forming Cu 2 O process is in H 2 Or use ordinary power frequency electric furnace to heat to 800-1380°C in liquefied petroleum gas environment. This slow heating time process can easily affect the airtightness, storage conditions and surface color difference of the finished Dumet silk. After that, it is sintered to protect Cu after coating with boron. 2 At the O level, there is still sodium ion contamination of Dumet silk used for semiconductor devices, thus forming Dumet silk products for the optical and power supply markets. [0003] The existing patent No. 00112365.3 discloses a method and d...

AI Technical Summary

Problems solved by technology

[0005] turns into red Cu 2 O and released O 2 Causes bubbles to form around the Dumet wire fused in the platinum group glass, thereby affecting the airtightness; in addition, when feeding the bare wire for heating and reduction, such as wire feeding failure or accidental wire breakage, it is easy to form no-load heating , resulting in energy waste and unstable performance

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