Dumet wire microwave heating production system
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 樊伟
- Publication Date
- 2014-02-12
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to a Dumet wire manufacturing system, in particular to a Dumet wire with a copper-plated layer of an iron-nickel alloy to rapidly generate Cu by using microwave heating, oxidation and sintering. 2 Dumet silk microwave heating production system at O level. Background technique
[0002] Ordinary red, yellow, boron-free Dumet wire, when forming Cu 2 O process is in H 2 Or use ordinary power frequency electric furnace to heat to 800-1380°C in liquefied petroleum gas environment. This slow heating time process can easily affect the airtightness, storage conditions and surface color difference of the finished Dumet silk. After that, it is sintered to protect Cu after coating with boron. 2 At the O level, there is still sodium ion contamination of Dumet silk used for semiconductor devices, thus forming Dumet silk products for the optical and power supply markets.
[0003] The existing patent No. 00112365.3 discloses a method and d...