Semiconductor structure using plasma to control feature size and manufacturing method thereof
A feature size, plasma technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as costing a lot of time and money, and achieve the effect of saving time and money
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Embodiment 1
[0044] Such as Figure 4 Shown is the semiconductor structure using plasma to control the feature size of the present invention, which is a schematic diagram of a logic device 100 during shallow trench isolation (STI) process. The semiconductor structure includes a silicon Si substrate 10; a pad oxide layer 20 (Pad Oxide) is formed on the substrate 10; a hard mask of silicon nitride SiN is formed on the pad oxide layer 20 layer 30; a bottom anti-reflection layer 40 (BARC) is covered on the hard mask layer 30; and a photoresist 50 (PR) is covered on the bottom anti-reflection layer 40, and through a photolithography process, according to the design A good pattern is formed as a photo mask.
[0045] By plasma dry etching method, the bottom anti-reflection layer 40 and the hard mask layer 30 are etched downward to form the first trench 61 at the position not covered with the photoresist 50 on the bottom anti-reflection layer 40, so that the substrate The pad oxide layer 20 is e...
Embodiment 2
[0059] Such as Image 6 What is shown is a schematic diagram of the semiconductor structure of the present invention being a flash memory device 200 in another embodiment when a shallow trench isolation (STI) process is performed. Most of the semiconductor structure is similar to the structure shown in the logic device 100, except that the pad oxide layer 20 ( Figure 4 ) is replaced by first forming a coupling oxide layer 21 (coupling oxide), and then forming a polysilicon film 22 (ie, FG POLY floating gate polysilicon film) on the coupling oxide layer 21 . Similar to the above, the hard mask layer 30, the bottom anti-reflection layer 40, and the photoresist 50 as a photomask are successively formed, and, after using a mixed gas such as carbon tetrafluoride CF4 and hydrogen bromide HBr In the process of forming the first trench 61 by etching with plasma, a passivation layer 70 is formed at the sidewall position of the first trench 61, so that the photoresist 50, the bottom a...
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