Manufacturing method for N type crystalline silicon solar cell

Abstract

The invention discloses a manufacturing method for an N type crystalline silicon solar cell. The manufacturing method includes the following steps that (1), N type monocrystal silicon is adopted as a substrate, and the substrate is cleaned and texturized; (2), boron paste is printed in the electrode area on the back face of the silicon wafer, boron-doped PN junctions are formed after drying and annealing, and meanwhile an oxidation layer is formed on the back face of the silicon wafer; (3), phosphorus diffusion is performed on one single face; (4), the back face of the silicon wafer is etched partially; (5), an impurity glass layer is removed; (6), an antireflection film is deposited and passivated; (7), aluminum paste is printed to form aluminum back junctions; (8), a front face electrode and a back face electrode are printed and dried to obtain the N type crystalline silicon solar cell. Aluminum paste doping is performed in a non-electrode area of the back face of the silicon wafer to form the aluminum back junctions, boron paste doping is adopted for the electrode area of the back face to manufacture the electrodes, and not only is the problem of assembly welding solved, but also the problem that cell efficiency is reduced because the area of the back face PN junctions is reduced is avoided.

Description

technical field [0001] The invention relates to a preparation method of an N-type crystalline silicon solar cell, belonging to the technical field of solar energy. Background technique [0002] Currently, solar cells are the dominant product in the photovoltaic market. In recent years, with the continuous development of science and technology, the technical problems that plagued N-type crystalline silicon solar cells have gradually been overcome, which greatly promoted the development of N-type crystalline silicon solar cells in terms of structure and technology. At present, the back contact solar cell (IBC) produced by Sun Power Company of the United States and the HIT (Hetero-junction Intrinsic Thin-layer) solar cell produced by Sanyo Company are commercial solar cells based on N-type crystalline silicon substrates. These two batteries are currently the solar cells with the highest conversion efficiency in commercial production, and they are also the only two solar cells ...

AI Technical Summary

Problems solved by technology

Among them, there are generally two problems in the way of boron doping: one is to use nitrogen to carry liquid BBr 3 Although the effect of tubular diffusion is the best, the uniformity of diffusion is difficult to control; second, the diffusion temperature is too high to deteriorate the performance of the crystalline silicon substrate

[0004] At present, most domestic solar cells are prepared by aluminum alloying to form Al-p+ emitters on N-type crystalline silicon substrates, and for aluminum alloying to form Al-p+ emitters, it is mainly concentrated on all-aluminum back junctions and localized aluminum On back-junction solar cells (i.e. aluminum doping in the non-electrode region and no doping in the electrode region), however, there are some defects in the solar cell structures of these two structures: for all-aluminum back-junction solar cells, it is There is a problem that the back side cannot be soldered

For local aluminum back-junction solar cells, although it can solve the problem of component welding, but because there are more electrode areas on the back of the silicon wafer, and there is no PN junction in this part of the area, the area of ​​​​the PN junction is relatively reduced. , affecting the battery efficiency