Manufacturing method for N type crystalline silicon solar cell

Abstract

The invention discloses a manufacturing method for an N type crystalline silicon solar cell. The manufacturing method includes the following steps that (1), N type monocrystal silicon is adopted as a substrate, and the substrate is cleaned and texturized; (2), boron paste is printed in the electrode area on the back face of the silicon wafer, boron-doped PN junctions are formed after drying and annealing, and meanwhile an oxidation layer is formed on the back face of the silicon wafer; (3), phosphorus diffusion is performed on one single face; (4), the back face of the silicon wafer is etched partially; (5), an impurity glass layer is removed; (6), an antireflection film is deposited and passivated; (7), aluminum paste is printed to form aluminum back junctions; (8), a front face electrode and a back face electrode are printed and dried to obtain the N type crystalline silicon solar cell. Aluminum paste doping is performed in a non-electrode area of the back face of the silicon wafer to form the aluminum back junctions, boron paste doping is adopted for the electrode area of the back face to manufacture the electrodes, and not only is the problem of assembly welding solved, but also the problem that cell efficiency is reduced because the area of the back face PN junctions is reduced is avoided.

Description

technical field

[0001] The invention relates to a preparation method of an N-type crystalline silicon solar cell, belonging to the technical field of solar energy. Background technique

[0002] Currently, solar cells are the dominant product in the photovoltaic market. In recent years, with the continuous development of science and technology, the technical problems that plagued N-type crystalline silicon solar cells have gradually been overcome, which greatly promoted the development of N-type crystalline silicon solar cells in terms of structure and technology. At present, the back contact solar cell (IBC) produced by Sun Power Company of the United States and the HIT (Hetero-junction Intrinsic Thin-layer) solar cell produced by Sanyo Company are commercial solar cells based on N-type crystalline silicon substrates. These two batteries are currently the solar cells with the highest conversion efficiency in commercial production, and they are also the only two solar cells ...