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Method for Controlling Crystallization Speed ​​in Silicon Ingot Casting

A technology of silicon ingot casting and crystallization speed, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of inability to accurately control the crystallization of silicon liquid, and achieve the effect of stabilizing the crystallization quality of liquid silicon and avoiding hysteresis.

Active Publication Date: 2016-03-16
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method of controlling the heater power by checking the temperature in the thermal field at the top temperature measurement point can accurately check the temperature change in the thermal field when the ingot feeding amount or the crucible manufacturer used changes, so that the temperature can be adjusted by adjusting the temperature. Adjust the variation of the heater. However, if the feeding amount of the ingot furnace is fixed and the manufacturer of the crucible is fixed, the power of the heater is controlled by controlling the temperature of the temperature measurement point. Very good precise control of silicon liquid crystallization

Method used

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  • Method for Controlling Crystallization Speed ​​in Silicon Ingot Casting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The first step: the opening of the shutter is 28 degrees, the bottom of the silicon liquid begins to dissipate heat, and the temperature at the top temperature measurement point 51 is maintained above the melting point of the silicon liquid, and the top of the silicon liquid is kept from crystallizing for 60 minutes;

[0048] The second step: on the basis of the first step, continue to open the louvers at a constant speed to an angle of 38 degrees, and the temperature setting of the top temperature measuring point 51 is slightly lowered by 3°C, and the time is 60 minutes;

[0049] The third step is to control the output power of the ingot furnace to 59kw, the louver opening angle is 48 degrees, and the time is 300 minutes;

[0050] The fourth step is to control the output power of the ingot furnace to 64kw, the louver opening angle is 63 degrees, and the time is 240 minutes;

[0051] The fifth step is to control the output power of the ingot furnace to 69kw, the louver opening a...

Embodiment 2

[0056] The first step: the opening of the shutter is 22 degrees, the bottom of the silicon liquid begins to dissipate heat, and the temperature at the top temperature measurement point 51 is maintained above the melting point of the silicon liquid, and the top of the silicon liquid is kept from crystallizing for 30 minutes;

[0057] The second step: on the basis of the first step, continue to open the louvers at a constant speed to an angle of 32 degrees, and the temperature setting of the top temperature measurement point 51 is slightly lowered by 3°C, and the time is 30 minutes;

[0058] The third step is to control the output power of the ingot furnace to 51kw, the louver opening angle is 42 degrees, and the time is 240 minutes;

[0059] The fourth step is to control the output power of the ingot furnace to 56kw, the louver opening angle is 57 degrees, and the time is 240 minutes;

[0060] The fifth step is to control the output power of the ingot furnace to 61kw, the louver opening...

Embodiment 3

[0065] The first step: the opening of the shutter is 27 degrees, the bottom of the silicon liquid begins to dissipate heat, and the temperature at the top temperature measurement point 51 is maintained above the melting point of the silicon liquid, and the top of the silicon liquid is kept from crystallizing for 40 minutes;

[0066] The second step: on the basis of the first step, continue to open the louvers at a constant speed to an angle of 37 degrees, and the temperature setting of the top temperature measurement point 51 is reduced by 2° C., and the time is 40 minutes;

[0067] The third step is to control the output power of the ingot furnace to 57kw, the louver opening angle is 47 degrees, and the time is 270 minutes;

[0068] The fourth step is to control the output power of the ingot furnace to 62kw, the louver opening angle is 62 degrees, and the time is 270 minutes;

[0069] The fifth step is to control the output power of the ingot furnace to 67kw, the louver opening angle ...

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Abstract

The invention discloses a method for controlling crystallization velocity during silicon ingot casting. The method comprises the step of crystallizing by adopting an ingot casting furnace, wherein a crystallization process comprises a plurality of process control steps, and in at least one process control step, the ingot casting furnace operates according to preset ingot casting furnace output power so as to control the heat quantity in a heat field of the ingot casting furnace. The crystallization velocity during silicon ingot casting in the photovoltaic industry is controlled by applying the technical scheme disclosed by the invention, the existing PID (Proportion-Integration-Differentiation) controller two-step calculation method is changed, and the power is set directly in a controller, so that the hysteresis of the two-step calculation method is avoided; the heat quantity required for stable crystal growth in the heat filed is controlled through presetting the power, so that the crystallization velocity of silicon liquid is controllable, the crystallization quality of the silicon liquid is stabilized, and the hysteresis caused by output power calculation due to temperature control is avoided.

Description

Technical field [0001] The invention relates to the field of photovoltaic manufacturing, in particular to a method for controlling the crystallization speed in the casting of silicon ingots. Background technique [0002] At present, the photovoltaic industry is developing rapidly, and the polycrystalline ingot furnace has a variety of thermal field forms, and different thermal fields are designed for unique casting methods, and the casting process of polycrystalline silicon ingots is very different. However, no matter how the ingot casting process changes and adjusts, the five ingot casting processes do not change much, namely: heating, melting, crystal growth, annealing, and cooling. [0003] Take Jinggong 500N ingot furnace as an example, such as figure 1 As shown, it includes: a heat sink 10, made of graphite, which has good thermal conductivity, is used to carry silicon material, a quartz crucible loaded with silicon material, and a graphite side guard 20 and a graphite bottom...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 李孟方军杰周秉林魏景拓
Owner YINGLI GRP
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