Crucible used for preparing monocrystalline silicon by czochralski method
A single crystal silicon, Czochralski technology, applied in the field of crucibles, can solve the problems of long heating time, shorten the service life of the crucible, slow heating, etc., and achieve the effects of good temperature control performance, reduced sidewall thickness, and extended service life.
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Embodiment 1
[0033] The diameter d of the heat conduction hole of the crucible side wall 11 of the carbon-carbon composite material described in this embodiment is 8-15 mm; the distance L1 between the boundaries of two adjacent heat conduction holes 2 is 30-50 mm.
Embodiment 2
[0035] The diameter d of the heat conduction hole of the crucible side wall 11 of the carbon-carbon composite material described in this embodiment is 10 mm, and the distance L1 between the boundaries of two adjacent heat conduction holes 2 is 50 mm.
Embodiment 3
[0037] The crucible described in this embodiment is a two-stage crucible structure (not shown in the figure), including the side wall of the upper layer of carbon-carbon composite material and the bottom of the lower layer of graphite material, and the heat conduction holes are arranged on the side wall .
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