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Method for manufacturing tantalum capacitor

A manufacturing method and technology of tantalum capacitors, which are applied in the direction of capacitors, electrolytic capacitors, capacitor electrodes, etc., can solve the difficulty of increasing the production process control and production costs, the high contact resistance between the strengthening layer and the tantalum anode block, and the combination of the strengthening layer and the tantalum anode block Poor strength and other problems, to achieve the effect of eliminating weak bonding, reducing control difficulty, and small change rate

Active Publication Date: 2014-03-26
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] During the forming process of the tantalum capacitor raw body, the friction between the tantalum anode block and the inner wall of the mold destroys the surface micropores of the tantalum anode block and becomes smooth, and the bonding strength between the strengthening layer and the tantalum anode block is extremely poor during post-processing. The loss of the product changes greatly during the high and low temperature measurement process
For this reason, many tantalum capacitor manufacturers have carried out a lot of research on how to improve the bonding force between the strengthening layer and the surface of the tantalum anode block. If the tantalum block green body does not produce friction with the inner wall of the mold, if the strengthening layer is directly impregnated, because the fumed silica content in the strengthening layer is low and the adhesion is poor, it only plays the role of dispersing manganese dioxide powder, making the strengthening layer The contact resistance with the tantalum anode block is relatively large
Under high temperature and low temperature conditions, the large rate of change of contact resistance directly leads to poor stability of product loss value
The implementation of these technologies improves the bonding strength between the tantalum block and the strengthening layer to a certain extent, but at the same time increases the difficulty of controlling the production process and the production cost

Method used

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  • Method for manufacturing tantalum capacitor
  • Method for manufacturing tantalum capacitor
  • Method for manufacturing tantalum capacitor

Examples

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Embodiment 1

[0029] A method for manufacturing tantalum capacitors, taking the production of CA45 type 50V10μF as an example: use 500mg of tantalum powder with a CV value of 3500μF.V / g, and press the density to 6.5g / cm 3 , pressed into an anode tantalum block with a size of 5.0×3.8×4.0, which includes the following steps:

[0030] (1) Preparation of adhesive:

[0031] a), get 100ml concentration and be 60% manganese nitrate solution, add nitric acid to adjust the pH of solution to be 1.5;

[0032] b), above-mentioned manganese nitrate solution is cooled to room temperature;

[0033] c), weigh 15 grams of fumed silica, join in the manganese nitrate solution;

[0034] d), after stirring for 10 minutes, let stand at room temperature for 12 hours, eliminate the bubbles in the solution, and set aside;

[0035] (2) Make the adhesive layer:

[0036] a), immerse the anode tantalum block that has completed the manganese dioxide electrolyte layer film into the above-mentioned binder solution for...

Embodiment 2

[0049] A manufacturing method of tantalum capacitors, taking the production of CA45 type 16V47μF as an example: use 94mg of tantalum powder with a CV value of 32000μF.V / g, and a pressing density of 5.0g / cm 3 , pressed into an anode tantalum block with a size of 4.0×3.0×1.6, which includes the following steps:

[0050] (1) Preparation of adhesive:

[0051] a), get 100ml concentration and be 30% manganese nitrate solution, add nitric acid to adjust the pH of solution to be 4;

[0052] b), above-mentioned manganese nitrate solution is cooled to room temperature;

[0053] c), weigh 7 grams of fumed silica, join in the manganese nitrate solution;

[0054] d), after stirring for 15 minutes, let stand at room temperature for 8 hours, eliminate the bubbles in the solution, and set aside;

[0055] (2) Make the adhesive layer:

[0056] a), immerse the anode tantalum block that has completed the manganese dioxide electrolyte layer film into the above-mentioned binder solution for 30 ...

Embodiment 3

[0069] A method for manufacturing tantalum capacitors, taking the production of CA45 type 6.3V100μF as an example: use 22mg of tantalum powder with a CV value of 100000μF.V / g, and press the density to 5.0g / cm 3 , pressed into an anode tantalum block with a size of 4.0×3.5×2.3, which includes the following steps:

[0070] (1) Preparation of adhesive:

[0071] a), get 100ml concentration and be 50% manganese nitrate solution, add nitric acid to adjust the pH of solution to be 2.5;

[0072] b), above-mentioned manganese nitrate solution is cooled to room temperature;

[0073] c), weigh 10 grams of fumed silica, join in the manganese nitrate solution;

[0074] d), after stirring for 12 minutes, let stand at room temperature for 10 hours, eliminate the bubbles in the solution, and set aside;

[0075] (2) Make the adhesive layer:

[0076] a), immerse the anode tantalum block that has completed the manganese dioxide electrolyte layer film into the above-mentioned binder solution ...

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Abstract

The invention discloses a method for manufacturing a tantalum capacitor. The method comprises the following steps: (1) preparing an adhesive; (2) manufacturing a bonding layer; (3) preparing strengthening layer suspension; (4) manufacturing a strengthening layer, and coating a carbon layer and a silver layer according to the conventional process until obtaining a finished product. The method has the benefits that the bonding layer is added between the strengthening layer and a tantalum anode block, so that the contact resistance of the strengthening layer and the surface of the tantalum anode block is greatly reduced; the factor that the tantalum anode block cannot be firmly bonded with the strengthening layer due to the smooth surface is eliminated, and the rate of change of the loss value of the tantalum electrolytic capacitor in a high and low temperature environment is reduced by more than 50 percent; the contact resistance is greatly reduced through the bonding layer, therefore, the stability of the loss value of a product is improved; the method also has the characteristics that the technological operation is simple, the control is easy, and the method is suitable for industrialized mass production; the control difficulty during the production process and the production cost are reduced.

Description

technical field [0001] The invention relates to a method for manufacturing a tantalum capacitor, which belongs to the technical field of capacitor manufacturing. Background technique [0002] During the molding process of the green tantalum capacitor, the friction between the tantalum anode block and the inner wall of the mold destroys the micropores on the surface of the tantalum anode block and becomes smooth, and the bonding strength between the reinforcement layer and the tantalum anode block is extremely poor during post-processing. The loss of the product changes greatly during the high and low temperature measurement process. For this reason, many tantalum capacitor manufacturers have carried out a lot of research on how to improve the bonding force between the strengthening layer and the surface of the tantalum anode block. If the tantalum block green body does not produce friction with the inner wall of the mold, if the strengthening layer is directly impregnated, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/00H01G9/04
Inventor 王俊蒙勇黄艳胡科正刘一峰
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD