Transversal bipolar transistor with low-ratio on-resistance

Abstract

The invention discloses a transversal bipolar transistor with low-ratio on-resistance. The transversal bipolar transistor comprises a substrate, a first RESURF region on the substrate, a collector region, a base region, and an emitter region, and further comprises a second RESURF region for smoothing the electric field change of a drift region, wherein the collector region, the base region and the emitter region are arranged in sequence; a base region ohmic contact region is formed in the base region; a base electrode is arranged on the base region ohmic contact region; a collector region ohmic contact region is formed in the collector region; a collector electrode is arranged on the collector region ohmic contact region; an emitting electrode is arranged on the emitter region. Through the arrangement of the second RESURF region, the electric field of the drift region of the transversal bipolar transistor can be smooth, so that the reverse blocking voltage can be higher and the on-resistance can be lower under the condition that the drift region length is not changed.

Description

Technical field [0001] The invention relates to a power semiconductor device and a manufacturing method thereof, in particular to a lateral bipolar transistor with low specific on-resistance. Background technique [0002] Power semiconductor devices are also called electronic power devices. With the development of power integrated circuits, especially monolithic power integrated systems, power semiconductor devices are booming. The electrodes of the lateral power devices are located on the surface of the chip, and it is easy to achieve mutual integration with low-voltage signal circuits and other devices through internal connections. Therefore, the lateral power devices are widely used in power integrated circuits. In power integrated circuits, lateral power devices often account for more than half of the entire chip area, which is the core and key of the entire power integrated circuit. Moreover, with the development of modern power integrated circuits, higher requirements have...

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Problems solved by technology

[0005] For this reason, what the present invention is to solve is that the dopant dose in the drift region of the lateral bipolar transistor with the existing SINGLE RESURF structure has an opposite effect on the reverse blocking voltage and the specific on-resistance, which can not give consideration to improving the reverse conduction. Voltage and at the same time reduce the technical problem of specific on-resistance, and provide a lateral bipolar transistor with low specific on-resistance

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