A 5-bit Active Local Oscillator Phase Shifter for X-band

A phase shifter, X-band technology, applied in the direction of phase-shift network, multi-terminal-to-network, etc., can solve the problems of low integration, low phase-shift accuracy, and difficult processing.

Inactive Publication Date: 2017-01-11
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional implementations of phase shifters include switching transmission lines, quadrature hybrid coupling lines, and loading lines. The disadvantages of these implementations based on discrete components are: (1) The circuit topology is complex; (2) The design is difficult; (3) ) The process is difficult to process; (4) The phase shift accuracy is low; (5) The integration is low
The disadvantage of this method is that the accuracy of the circuit for adjusting the amplitude of the two quadrature signals is relatively high, and the design is difficult. This accuracy is directly related to the phase shift error of the phase shifter.

Method used

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  • A 5-bit Active Local Oscillator Phase Shifter for X-band
  • A 5-bit Active Local Oscillator Phase Shifter for X-band
  • A 5-bit Active Local Oscillator Phase Shifter for X-band

Examples

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Embodiment Construction

[0042] Take the design of a 5-bit active phase shifter operating at 8GHz~12GHz as an example.

[0043] The structure diagram of the phase shifter is as figure 1 As shown, each sub-circuit is as image 3 , Figure 4 , Figure 5 , Image 6 Shown. Adopt TSMC 0.13μm RF CMOS 1P8M craft, simulation tool is Cadence SpectreRF, adopt 1.2V power supply voltage. Figure 5 The metal used in the transformer balun in the middle is M6. Compared with the high-level metal, M6 has larger parasitic resistance and smaller inter-metal parasitic capacitance, so on the one hand, it can reduce the Q value and increase the bandwidth, on the other hand, it can reduce the differential output. The phase error.

[0044] Image 6 Among them, R18-R25 uses polysilicon resistors, where R18=R19=R20=R21= R22=R23=R24=R25=100Ω. C13-C20 use MIM capacitors, where C13=C14=C15=C16=177fF, C17=C18=C19=C20=145fF. Therefore, the pole of the first stage is , The pole of the second stage is . Considering the gate parasitic...

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Abstract

The invention belongs to the technical field of integrated circuits and relates to a design of a phase shifter applied in an X-wave band (8-12 GHz) phased array receiver. The phase shifter consists of a transformer type balun, a multiphase filter, four sub phase shifters and a combiner circuit, wherein in the picture one, the phase shifting precision of the four sub phase shifters is 3-digit, and 8 phase shifting states are realized in the range of 0-360 degrees by the sub phase shifters through taking 45 degrees as a phase shifting step value; in the picture three, the four sub phase shifters and other circuits form an X-wave band phase shifter of which the phase shifting precision is 5-digit, and 32 phase shifting states are realized in the range of 0-360 degrees by the phase shifter through taking 11.25 degrees as a phase shifting step value. Firstly, a signal VIN in input at a single end, differential signals VIN+ and VIN- are obtained by the transformer type balun, a group of orthometric differential signals VIN_I+, VIN_I-, VIN_Q+ and VIN_Q- are obtained after the differential signals VIN+ and VIN- pass by the multiphase filter, the group of orthometric differential signals are the input of the sub phase shifters, and after the output signals of the four sub phase shifters are compounded by the combiner circuit, output signals VOUT+ and VOUT- are obtained.

Description

Technical field [0001] The invention belongs to the technical field of integrated circuits, and specifically relates to a phase shifter used in an X-band phased array receiver, and can be used in radio frequency integrated circuits that require high-precision phase shifters such as radio frequency microwave phased array receivers. Background technique [0002] With the continuous development of deep submicron integrated circuit technology, the realization of a highly integrated low-cost phased array system using complementary metal oxide semiconductor CMOS technology becomes possible. Phased array technology in civilian fields such as automotive radar (operating frequency at 24GHz and 77GHz), short-distance high-speed wireless communications (operating frequency at 60GHz) applications began to attract people's attention. The phase shifter is the most critical module in the phased array system. The traditional implementations of phase shifters include switching transmission lines...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H11/16
Inventor 李巍陈昌铭李宁
Owner FUDAN UNIV
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