Method for preparing BOE (Buffer Oxide Etch) etching liquid

An etching solution and concentration technology, applied in chemical instruments and methods, surface etching compositions, etc., can solve the problems of complex penetration, slow spreading speed, poor microscopic surface ability, etc., achieve simple operation, reduce contact angle, and reduce impurity content. low effect

Inactive Publication Date: 2014-04-30
ZHEJIANG KAISN FLUOROCHEM
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the BOE etching solution containing the above-mentioned surfactants cannot quickly infiltrate the semiconductor silicon wafer. The contact angle of the BOE etching solution on the semiconductor silicon wafer is relatively high, and the spreading speed of the BOE etching solution on the surface of the semiconductor silicon wafer is relatively slow, and its penetration is complicated. Poor ability to micro surface

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  • Method for preparing BOE (Buffer Oxide Etch) etching liquid
  • Method for preparing BOE (Buffer Oxide Etch) etching liquid

Examples

Experimental program
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Effect test

Embodiment 1

[0021] The preparation method of BOE etchant comprises the steps:

[0022] (1) Add 49wt% electronic grade hydrofluoric acid (HF), 30wt% electronic grade ammonia, and ultrapure water to the reactor in turn, and stir and react at room temperature for 6 hours. Excessive hydrofluoric acid (HF ) reacts with ammonia water to partially convert to ammonium fluoride (NH 4 F), to get hydrofluoric acid (HF) and ammonium fluoride (NH 4 F) mixtures;

[0023] (2) After the mixture obtained in step (1) is cooled to room temperature, add additives and lauryl ammonium sulfate anionic surfactant in turn, stir and mix at room temperature for 12 hours, mix well, and filter with a filter screen with a pore size of 0.2 μm Finally, a transparent BOE etching solution is obtained. The concentration of hydrofluoric acid (HF) in the obtained BOE etching solution is 15wt%, and ammonium fluoride (NH 4 F) The concentration is 30 wt%.

Embodiment 2-7

[0025] Following the exact same steps as above, only the above raw materials are changed, and the concentration of hydrofluoric acid (HF) in the BOE etching solution and the concentration of ammonium fluoride (NH 4 F) Concentration, see Table 1.

[0026] The components contained in the etching solution are shown in Table 1. Wherein embodiment 1 additive is succinic acid, amylamine, and consumption is respectively 150ppm, 50ppm; Embodiment 2 additive is undecanoic acid, decylamine, and consumption is respectively 200ppm, 100ppm; Embodiment 3 additive is methylethanolamine, isopropyl Alcohol and valeric acid, consumption is respectively 50ppm, 300ppm and 100ppm; Embodiment 4 additive is dodecylamine, octanol, consumption is respectively 50ppm, 100ppm; Embodiment 5 additive is hexanoic acid, dodecyl alcohol, consumption is respectively 25ppm, 25ppm ; Embodiment 6 additive is n-butanol, and consumption is 450ppm; Embodiment 7 has no additive.

[0027] Lauryl ammonium sulfate ani...

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Abstract

The invention discloses a method for preparing a BOE (Buffer Oxide Etch) etching liquid. The method comprises the following steps: (1) sequentially adding 49wt% hydrofluoric acid (HF), 3-wt% ammonia water and super-pure water into a reactor, and stirring to react for 6-12 hours at the room temperature, so as to obtain a mixture of hydrofluoric acid (HF) and ammonium fluoride (NH4F); and (2) sequentially adding additives and alkyl ammonium sulfate anionic surfactants into the obtained mixture, stirring and mixing for 6-18 hours at the room temperature so as to obtain the transparent BOE etching liquid after uniform mixing. The BOE etching liquid prepared by using the method is high in etching selectivity, and the contact angle of the BOE etching liquid to a silicon wafer is remarkably reduced. In addition, the preparation method is simple to operate, and the etching liquid is low in impurity content.

Description

technical field [0001] The invention relates to a preparation method of a wet etching solution composition, more particularly to a preparation method of a BOE etching solution. Background technique [0002] Buffered oxide etchant (BOE) achieves the purpose of etching by removing the oxide layer of the semiconductor silicon wafer film that is not covered by photoresist. It is widely used in the manufacture of microstructures and silicon-based light-emitting devices. The preparation method of BOE etching solution is generally: using ultrapure water as a solvent, mixing a certain concentration of hydrofluoric acid and ammonium fluoride in a certain proportion to obtain the required ratio of BOE etching solution. However, the surface tension of the BOE etching solution obtained by the above preparation method is very high, and the wettability to the semiconductor silicon wafer etching layer is very poor, resulting in severe deformation of the etching pattern. [0003] In order ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08
Inventor 王海田志扬张晓东潘绍忠张学良韩虹羽魏俊明
Owner ZHEJIANG KAISN FLUOROCHEM
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