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Manufacturing method of indium-tin oxide target material

A technology of indium tin oxide and its production method, which is applied in metal material coating process, ion implantation plating, coating, etc., and can solve the problems of high sputtering process, internal structure uniformity and grain size that cannot meet the requirements, etc. problem, to achieve the effect of excellent density

Active Publication Date: 2014-05-14
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem solved by the present invention is that the density, uniformity of the internal structure and grain size of the indium tin oxide target produced by the existing process cannot meet the increasingly demanding sputtering process

Method used

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  • Manufacturing method of indium-tin oxide target material
  • Manufacturing method of indium-tin oxide target material
  • Manufacturing method of indium-tin oxide target material

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Embodiment Construction

[0054] The inventors found that the powder for preparing the ITO target is mainly a mixture of indium oxide and tin oxide. reduction. Due to these characteristics, it is very difficult to prepare good quality ITO targets. However, the sintering method or the hot pressing method used in the existing technology to prepare the ITO target cannot fully solve the problems caused by the characteristics of the ITO powder.

[0055] In view of this, the inventor proposes to prepare the ITO target mainly by combining cold isostatic pressing and hot isostatic pressing. Since cold isostatic pressing and hot isostatic pressing can provide isotropic uniform pressure, the degree of densification of the target blank is consistent, thereby achieving an ITO target with a uniform internal structure.

[0056] The hot isostatic pressing has the advantages of both isotropic pressure and hot pressing, and can further densify the ITO target blank on the basis of the previous cold isostatic pressing ...

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Abstract

The invention discloses a manufacturing method of an indium-tin oxide target material. The manufacturing method comprises the following steps of providing ITO powder, carrying out pre-pressing molding on the ITO powder by a static pressing technology to obtain a first ITO target blank material, putting the first ITO target blank material into a first sheath, carrying out vacuum-pumping, carrying out treatment on the first ITO target blank material in the first sheath by a cold isostatic pressing technology to obtain a second ITO target blank material, after removing the first sheath, putting the second ITO target blank material into a second sheath, carrying out vacuum-pumping, carrying out treatment on the second ITO target blank material in the second sheath by a hot isostatic pressing technology to obtain a third ITO target blank material, removing the second sheath, and carrying out machining on the third ITO target blank material to obtain an ITO target material. The manufacturing method solves the problem that ITO powder is not molded easily, can be decomposed easily and can be reduced so that ITO target material processing is limited. Through the manufacturing method, the ITO target material having excellent density and internal microstructure uniformity is obtained.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing an indium tin oxide (ITO) target. Background technique [0002] ITO (Indium Tin Oxide) thin film is an n-type semiconductor ceramic thin film, which is widely used in Optics, electricity and other fields. Most of the existing processes use the ITO thin film prepared by the magnetron sputtering method. This method has the advantages of good process control and high film quality, and is widely used in industrial production. The premise of preparing high-quality ITO thin films by magnetron sputtering is to prepare high-purity, high-density, and uniform-density ITO targets. [0003] Now the usual methods of manufacturing ITO targets include sintering method and hot pressing method, etc., because indium oxide and tin oxide are easy to decompose at high temperature, and indium oxide and tin oxide powder are barren powders, which are not easy to pr...

Claims

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Application Information

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IPC IPC(8): C04B35/457C04B35/622C23C14/06C23C14/34
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽宋佳
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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