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Magnetic storage based on voltage control

A magnetic memory, voltage control technology, applied in the fields of magnetic field controlled resistors, static memory, digital memory information, etc., can solve the problems of high power consumption transistors, low power consumption utilization, poor scaling, etc., to avoid leakage current. , low power consumption, high reliability effect

Active Publication Date: 2014-05-14
致真存储(北京)科技有限公司
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Problems solved by technology

However, the further development of MRAM has been restricted by the FIMS method, which is mainly manifested in: 1. Because the current required to change the state of the memory cell is too high (such as mA), resulting in excessive power dissipation and underutilization of the power
[0003] The problem with the current STT approach is that it still consumes more power than a transistor driven by a low voltage

Method used

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  • Magnetic storage based on voltage control
  • Magnetic storage based on voltage control
  • Magnetic storage based on voltage control

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Embodiment Construction

[0048] The substantive features of the present invention are further described with reference to the accompanying drawings. Accompanying drawing is schematic diagram. The thicknesses of the various functional layers or regions involved are not actual dimensions, and the resistance and voltage values ​​in the working mode are also not actual values.

[0049] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is to be construed as being limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0050] The present invention proposes a novel MTJ (Magnetic Tunnel Junction) structure of a magnetic memory based on voltage control to change the magnetization state, ...

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Abstract

Provided is a magnetic storage based on voltage control. An MTJ structure of the magnetic storage is based on perpendicular magnetic anisotropy, namely, PMA, and a tunneling barrier layer is added on the basis of a classical MTJ structure, wherein the classical MTJ structure is a three layer structure which comprises a free layer, a reference layer and a tunneling barrier layer. The MTJ structure of the magnetic storage is formed by a bottom electrode, an antiferromagnetic metal mixing layer, first ferromagnetic metal, first oxide, second ferromagnetic metal, second oxide and a top electrode from bottom to top. The magnetic storage based on the voltage control has the advantages of being stable in nonvolatility, high in reading and writing speed, infinite in reading and writing times and the like. Due to the fact that magnetization states of storage units are changed based on the voltage control, electric currents needed for changing the states of the storage units are low, high reading and writing speed is maintained, and meanwhile low power consumption and a high power consumption utilization rate are achieved.

Description

technical field [0001] The invention relates to a magnetic memory based on voltage control, which includes a novel MTJ (magnetic tunnel junction) structure that changes the state of a memory cell based on voltage control, that is, VMTJ, and belongs to the technical field of non-volatile memory. Background technique [0002] Due to its stable non-volatility, high read and write speed, and unlimited read and write times, magnetic random access memory (MRAM) has attracted widespread attention from academia and industry since 2000, and a lot of research has been done on it. The first MRAM chips used field-induced magnetic pole flipping (FIMS) and were first commercialized in 2006; today they are mainly used in aerospace due to their radiation resistance. However, the further development of MRAM has been restricted by the FIMS method, which is mainly manifested in: 1. Because the current required to change the state of the memory cell is too high (such as mA), resulting in exce...

Claims

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Application Information

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IPC IPC(8): H01L43/00H01L43/08G11C11/15
CPCG11C11/161G11C11/1675
Inventor 张雨赵巍胜张博宇张有光
Owner 致真存储(北京)科技有限公司