Forming method for transistor
A technology of transistors and semiconductors, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as poor performance of transistors, and achieve the effect of improving reliability and performance
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[0040] In view of the problems existing in the gate last process in the prior art, the inventor has conducted research and found that when the dummy gate is removed by dry etching, polymer will be generated and attached to the bottom and sidewalls of the dummy gate trench. For example, in the dry etching process, oxygen is usually introduced into the etching reaction chamber, and part of the oxygen will react with polysilicon or other substances in the etching reaction chamber to form oxides, which can be regarded as a type of polymer ingredient. Although the subsequent use of wet etching to remove the polymer, the corrosive agent commonly used in the prior art is N-methylpyrrolidone (NMP, N-methyl-2-pyrrolidone) solvent or EKC solvent (one provided by DuPont EKC Technology) Kind of alkaline solution). Both NMP solvent and EKC solvent have strong alkalinity. While removing the polymer, it also damages adjacent semiconductor devices. The corrosion of NMP solvent or EKC solvent ...
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