A zinc sulfide thin film AC electroluminescent device containing doped quantum dots and its preparation method

Abstract

The invention relates to a thin film alternating current electroluminescence device and a manufacturing method of the thin film alternating current electroluminescence device, in particular to a zinc sulfide thin film alternating current electroluminescence device contained with doped quantum dots and a manufacturing method of the zinc sulfide thin film alternating current electroluminescence device. The thin film alternating current electroluminescence device comprises an ITO conductive glass layer (5), a first insulation layer (4), a light emitting layer (3), a second insulation layer (2) and a metal electrode layer (1), wherein the ITO conductive glass layer (5), the first insulation layer (4), the light emitting layer (3), the second insulation layer (2) and the metal electrode layer (1) are sequentially arranged, the light emitting layer (3) is formed by mixing zinc sulfide sol and the doped semiconductor quantum dots, the light emitting layer (3) manufactured by mixing the zinc sulfide sol and the doped semiconductor quantum dots is adopted so that the conductive performance can be improved, and the light emitting efficiency of the doped semiconductor quantum dots can be effectively enhanced. Meanwhile, in the process of manufacturing the thin film electroluminescence device in which the zinc sulfide sol and the doped semiconductor quantum dot mixed thin film is taken as the light emitting layer (3), the control over the thickness of the light emitting layer becomes relatively easy.

Description

technical field [0001] The invention relates to a thin-film alternating current electroluminescent device and a preparation method thereof, in particular to a zinc sulfide thin-film alternating current electroluminescent device containing doped semiconductor quantum dots and a preparation method thereof. Background technique [0002] At present, thin-film AC electroluminescent devices have been applied to high-resolution flat-panel displays. Thin-film AC electroluminescent devices have the advantages of strong breakdown resistance, longer life, low power and high brightness. Compared with liquid crystal display (LCD), thin-film electroluminescent display (TFEL) has the advantages of no backlight, high luminous intensity, and fast response speed; compared with cathode ray display (CRT), it has low energy consumption and luminous It has the advantages of high efficiency and wide viewing angle; compared with plasma display (PDP), it also has the advantages of low cost, safe us...

AI Technical Summary

Problems solved by technology

However, the zinc sulfide semiconductor layer and the doped quantum dot layer adopt an alternating structure, the process is relatively complicated, and the effective excitation of the doped quantum dots cannot be achieved, so it is difficult to achieve the best luminescent performance of the doped quantum dots

However, the traditional thin-film AC electroluminescent devices with ZnS:Mn as the light-emitting layer are realized by vacuum deposition, which requires high vacuum, high-purity raw materials and other strict requirements, and cannot be widely used.

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