Manufacturing method of semiconductor package

Abstract

A method for manufacturing a semiconductor package, comprising arranging at least one semiconductor component on a transparent carrier, wherein an adhesive layer is formed on the surface of the transparent carrier, a photomask is formed between the adhesive layer and the transparent carrier, and The at least one semiconductor component is adhered on the transparent carrier through the adhesive layer; an exposure and development step is performed to remove the portion of the adhesive layer not covered by the at least one semiconductor component; a package covering the at least one semiconductor component is formed glue; and removing the transparent carrier and the remaining glue layer. In the present invention, the patterned film is formed between the adhesive layer and the transparent carrier as a photomask, which can reduce the distance between the photomask and the adhesive layer, and prevent the exposure light from being enlarged after being diffracted by the photomask and the transparent carrier. error, so the exposure accuracy and product reliability can be further improved.

Description

technical field [0001] The invention relates to a semiconductor package and its manufacturing method, in particular to a semiconductor package manufacturing method capable of improving exposure accuracy and a semiconductor package obtained therefrom. Background technique [0002] With the vigorous development of the electronic industry, today's electronic products are developing towards the direction of miniaturization, multi-function, high electrical performance and high-speed operation. For example, with the integration of front-end semiconductor chip technology, dense electrode pads are formed on the active surface of the semiconductor chip to provide signal input / output (I / O). In order to cope with this development trend, back-end semiconductor companies are actively developing semiconductor packages that can use interconnection structures to fan out the signals transmitted by the electrode pads, such as fan-out packages. [0003] In such packages, semiconductor compone...

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Problems solved by technology

[0008] However, the photomask 14 is arranged on the bottom surface 10b of the transparent carrier 10, and the thickness of the transparent carrier 10 is about 700 μm. Therefore, the exposure light is diffracted by the photomask 14, and then passes through a thicker medium, which will distort the exposure pattern

Especially when semiconductor components are set, part of the semiconductor components 13 will usually sink into the adhesive layer 12 (such as Figure 1A shown), so the part of the adhesive layer outside the projected area of ​​the semiconductor component must be defined during exposure for removal in subsequent steps. However, due to the deformation of the exposure pattern, the Figure 1C The steps shown cannot remove the adhesive layer 12 around the semiconductor component 13, so that when the encapsulant 15 is formed, the side surface of the semiconductor component 13 cannot be completely covered, so that the side surface of the semiconductor component 13 and the encapsulant 15 form a gap g

If an interconnection structure is then formed on the semiconductor device, for example Figure 1G The shown circuit redistribution structure 17 and conductive component 18 formed on the semiconductor component 13 including the conductive trace 171 and the insulating layer 172 are bound to easily affect product reliability due to the gap g

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