Method for manufacturing laminated composite MEMS(Micro-electromechanical Systems)chips and laminated composite MEMS chip
A manufacturing method and combined technology, which is applied in the direction of manufacturing microstructure devices, coatings, metal material coating processes, etc., can solve the problems of high cost and poor design flexibility, and achieve low cost, flexible design, and small volume.
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Embodiment 1
[0036] A method for manufacturing a laminated combined MEMS chip, comprising the following steps:
[0037] (1) Formation of the first MEMS wafer 100A:
[0038] The material of the bottom plate wafer 101A is single crystal silicon with a crystal orientation. Through general semiconductor processing technology, a bottom plate insulating layer 102 is grown on the bottom plate wafer 101A. The material of the bottom plate insulating layer 102 is silicon dioxide. By applying glue, Exposure, development, etching and other semiconductor processing processes etch a bottom plate concave cavity 103a on the upper surface of the bottom plate wafer 101A, and the unetched part on the upper surface of the bottom plate wafer 101A becomes the first silicon pillar 101a and the bottom plate sealing area 101b, as figure 1 As shown, there is a base insulating layer 102 on the surface of the first silicon pillar 101a and the base sealing area 101b; the base cavity 103a is composed of a right half a...
Embodiment 2
[0057] The stacked combined MEMS chip 700 made in Embodiment 1, such as Figure 13 As shown, it is composed of a bottom plate 101, a first MEMS layer 104, a TSV integrated layer 410, a second MEMS layer 504 and a cover plate 501. There is a bottom plate cavity 103a on the bottom plate 101, and a cover plate cavity 503a on the cover plate. , the bottom cavity 103a and the TSV integration layer 410 form a lower sealing cavity 103, the cover cavity 503a and the TSV integration layer 410 form an upper sealing cavity 503, the internal air pressures of the two sealing cavities are different, and the first MEMS Layer 104 includes a first MEMS bonding region 104a, a first MEMS structure 104b and a first MEMS conductive region 104c, the first MEMS structure 104b is located in the lower sealed cavity 103, and the second MEMS layer 504 includes the first MEMS bonding region 504a, the first MEMS structure 504b and the first MEMS conductive region 504c, the second MEMS structure 504b is lo...
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