Etching Liquid Composition Of Copper/molybdenum Film Or Copper/molybdenum Alloy Film

A technology of composition and molybdenum alloy, which is applied in the field of etching liquid composition, can solve the problems of low metal content, etching cone angle, etching deviation and etching straightness, etc. , reduce the dosage, increase the effect of repeated times

Inactive Publication Date: 2014-07-16
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, for the etchant using hydrogen peroxide as the substrate, in order to repeatedly etch, the content of metal ions in the etchant increases. This metal ion can play a catalytic role in decomposing hydrogen peroxide, resulting in etching cone angle, etching deviation and etching. Straightness and other characteristics are lost, resulting in low metal content to maintain etching characteristics, and the problem of using a large amount of etching solution.

Method used

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  • Etching Liquid Composition Of Copper/molybdenum Film Or Copper/molybdenum Alloy Film
  • Etching Liquid Composition Of Copper/molybdenum Film Or Copper/molybdenum Alloy Film
  • Etching Liquid Composition Of Copper/molybdenum Film Or Copper/molybdenum Alloy Film

Examples

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Embodiment approach

[0019] According to another embodiment of the present invention, in addition to the etching inhibitor, the etchant composition further includes a glass etching inhibitor, which can slow down the etching speed of the glass substrate as the lower film to the greatest extent. Preferably, the glass etching inhibitor is a compound containing both boron atoms and fluorine atoms; more preferably, the glass etching inhibitor is boric acid or boric acid salt, and is further preferably selected from the group consisting of fluoroboric acid (HBF 4 ), sodium fluoroborate (NaBF 4 ), potassium fluoroborate (KBF 4 ), ammonium fluoroborate (NH 4 BF 4 ) and mixtures thereof.

[0020] Preferably, the glass etching inhibitor is contained in an amount of 0.01 to 2% by weight, more preferably in an amount of 0.05 to 1% by weight. If it is less than 0.01% by weight, the effect of inhibiting glass etching is very small, and if it exceeds 2% by weight, the etching speed will slow down and the eng...

Embodiment 1 to 10 and comparative example 1

[0036] The contents of the components listed in Table 1 below were mixed to prepare the compositions of Examples 1 to 10 and Comparative Example 1 of the present invention.

[0037] Table 1

[0038]

[0039] ATZ: 5-aminotetrazole (5-aminotetrazole),

[0040] IDA: iminodiacetic acid (iminodiacetic acid),

[0041] PHS: Potassium hydrogen sulfate

[0042] MEA: monomethanolamine

[0043] NMEA: N-methylethanolamine (N-methylethanolamine)

[0044] EA: Ethanolamine

[0045] DEA: Diethanolamine

[0046] TEA: Triethanolamine

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Abstract

The invention relates to an etching liquid composition of a copper / molybdenum film or a copper / molybdenum alloy film. The etching liquid composition of the copper / molybdenum film or the copper / molybdenum alloy film comprises an etching stabilizer of a compound which is provided with an alcohol group and an amino group simultaneously. The etching liquid composition of the invention can maintain etching characteristics of etching cone angle, etching error and etching straightness, etc. on condition that the etching liquid composition is used for performing etching project repeatedly and content of metal ions in the etching liquid is high. The etching liquid composition is applied in manufacture of TFT-LCD displays and OLED electrodes.

Description

technical field [0001] The invention relates to an etching liquid composition of a copper / molybdenum film or a copper / molybdenum alloy film, especially an etching liquid composition for a copper / molybdenum film or a copper / molybdenum alloy film of display electrodes such as TFT-LCD and OLED. Background technique [0002] Microcircuits such as semiconductor devices, TFT-LCDs, and OLEDs are coated evenly on conductive metal films such as aluminum, aluminum alloys, copper, and copper alloys or insulating films such as silicon dioxide films and silicon nitride films formed on substrates. The photoresist is then imaged after light irradiation through the patterned film to make the required pattern photoresist image, and the pattern is displayed on the metal film or insulating film under the photoresist by dry etching or wet etching Finally, a series of photolithography processes such as stripping and removing unnecessary photoresist are completed. [0003] The copper alloy used ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/44C23F1/18
Inventor 金世训李恩庆李宝妍申孝燮
Owner ENF TECH
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