A production process of transient voltage suppressor chip with channel effect
A technology of transient voltage suppression and channel effect, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as poor uniformity of diffusion process, inaccurate control of junction depth, and influence on product reliability. Achieve the effect of good uniformity of resistivity, good consistency of electrophoresis, and easy control of junction depth
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[0046] Such as figure 1 As shown, the chip structure of the transient voltage suppressor TVS is N + PN + Bi-directional high voltage transient voltage suppressor. The front section of the chip is as follows: 1TVS chip, 2 mesa grooves, 3 glass layers, 4 metal surfaces.
[0047] Such as figure 2 As shown, the chip process flow of the transient voltage suppressor TVS is as follows:
[0048] (1) Pre-diffusion treatment: Clean the surface of the silicon wafer through the ultrasonic cleaning process of acid, alkali and deionized water;
[0049] (2) Phosphorus source pre-expansion: Put the cleaned silicon wafer into a pre-diffusion furnace using a gaseous phosphorus source for diffusion to form a pre-expansion N + , the diffusion temperature of phosphorus source pre-expansion is 1100~1200℃, and the pre-expansion of N + Phosphorus diffusion junction sheet resistance is 0.2~0.6Ω / □, junction depth is 7~12um;
[0050] (3) Pre-diffusion treatment: acid immersion and deionized wate...
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