A production process of transient voltage suppressor chip with channel effect

Abstract

The invention provides a production technology for a transient voltage suppressor chip with the channeling effect. By means of the steps of gaseous state source diffusion, channel corrosion and double-faced electrophoresis, in the reverse state, the width of depletion layers and the reverse voltage of the high-voltage transient voltage suppressor chip which is of the N+PN+ structure are increased along with the increase of a reverse current, when the reverse current is increased to be close to Ic, the depletion layers on the two faces make contact with each other, the channeling effect is produced, the equivalent resistance is reduced, the clamp voltage is reduced, the reverse surge capacity is improved, the reliability of a diode is improved, the service life of the diode is prolonged, and the transient voltage suppressor chip has the advantages of being good in electrical parameter uniformity, better in ohmic contact and high in reliability, the problem that the thicknesses of two glass layers are uneven due to two times of single-face electrophoresis is avoided, the glass is high in stress-resisting capability of protection and not prone to damage, and the reliability of the transient voltage suppressor chip is further improved.

Description

technical field [0001] The invention relates to the technical field of crystal diode chip production, in particular to a production process of a transient voltage suppressor chip with channel effect. Background technique [0002] The transient voltage suppressor chip (TVS) is a high-efficiency protection device in the form of a diode. When the two poles of the TVS diode are subjected to a reverse transient high-energy impact, it can turn its two poles on the order of 10-12 seconds. The high impedance between the two poles becomes low impedance, absorbing up to several thousand watts of surge power, clamping the voltage between the two poles at a predetermined value, effectively protecting the precision components in the electronic circuit from being damaged by various surge pulses. [0003] The forward characteristic of the transient voltage suppressor is the same as that of an ordinary diode, and the reverse characteristic is a typical PN junction avalanche device. Under t...

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Problems solved by technology

[0004] At present, the production process of transient voltage suppressor chips in the semiconductor industry mainly has the following problems: the paper source diffusion production process is usually used, the uniformity of the diffusion process is not good, and the junction depth control is not accurate; the existing transient voltage suppressor chips are waiting When the effective resistance is constant, the clamping voltage increases with the increase of the reverse surge current, and the increase of heat generation makes the temperature of the diffusion junction high, resulting in thermal breakdown of the device under a small reverse surge power. issues affecting product reliability

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