Nitride semiconductor structure and semiconductor light emitting element

Abstract

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure is mainly characterized in that a first-type doped semiconductor layer and a second-type doped semiconductor layer are arranged on a substrate, a light-emitting layer is arranged between the first-type doped semiconductor layer and the second-type doped semiconductor layer and is of a multi-quantum-well structure, the multi-quantum-well structure comprises a plurality of alternated and stacked well layers and barrier layers, one well layer is arranged between every two barrier layers, and the barrier layers are made of AlxInyGa1-x-yN, wherein the x and the y meet the conditions that the x is larger than zero and smaller than one, the y is larger than zero and smaller than one, a sum of the x and the y is larger than zero and smaller than one, the well layers are made of InzGa1-zN, and the z is larger than zero and smaller than one. The semiconductor light-emitting component at least comprises the nitride semiconductor structure, a first-type electrode and a second-type electrode, and the first-type electrode and the second-type electrode supply power energy in a matched mode. In this way, the quaternary composition conditions can be adjusted to provide the barrier layers and the well layer, the barrier layers and the well layers are matched with crystal lattices, and crystal defects caused by mismatching of the crystal lattices are overcome.

Description

technical field [0001] The present invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to a nitrogen compound that uses a barrier layer of quaternary aluminum indium gallium nitride and a well layer of ternary indium gallium nitride in a multiple quantum well structure A compound semiconductor structure and a semiconductor light-emitting element belong to the technical field of semiconductors. Background technique [0002] In general, a nitride light-emitting diode is first formed on a substrate with a buffer layer, and then epitaxially grows an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer on the buffer layer; then, using lithography and etching processes removing part of the p-type semiconductor layer and part of the light-emitting layer until a part of the n-type semiconductor layer is exposed; then, forming an n-type electrode and a p-type electrode on the exposed part of ...

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Problems solved by technology

[0004] In addition, the above-mentioned multiple quantum well structure will also cause serious inclination or bending of the energy band due to the existence of a strong polarization electric field, causing electrons and holes to be separated and confined on both sides of the well layer, making the wave functions of electrons and holes (wavefunction) The overlap rate in space is reduced, and the radiative recombination rate (radiative recombination rate) and internal quantum efficiency (IQE) of electrons and holes are reduced.

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