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Layered VO2 laser pulse modulation device and application thereof

A pulse modulation, VO2 technology, applied in the layered VO2 laser pulse modulation device and its application in all solid-state pulsed lasers, can solve the problems of complex manufacturing process, large volume, unfavorable integration of micro-nano devices, etc.

Active Publication Date: 2014-08-20
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These two passive modulation devices have the following disadvantages: the manufacturing process is very complicated; they are particularly sensitive to the wavelength modulation range, and their absorption varies greatly for different wavelengths, or even does not absorb; the volume is relatively large, which is not conducive to the integration of micro-nano devices
These shortcomings have brought a lot of inconvenience to its application

Method used

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  • Layered VO2 laser pulse modulation device and application thereof
  • Layered VO2 laser pulse modulation device and application thereof
  • Layered VO2 laser pulse modulation device and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] VO 2 Pulse modulation device, including substrate and VO deposited on the substrate 2 material, structure such as figure 2 As shown, the substrate is magnesium fluoride substrate with a thickness of 1mm; the VO 2 The thickness of the material is 50nm, and it is processed into a rectangular sheet with a size of 2×2cm. The actual photo is as follows figure 1 shown.

[0051] VO grown on magnesium fluoride substrate 2 The preparation method is to use a polished magnesium fluoride single wafer in a specific direction as a substrate and obtain it by pulse laser deposition. See "Characterization of pulsed laser deposited MoS 2 by transmission electron microscopy", J. Mater. Res, 1993, 8(11): 2933.

[0052] VO of this embodiment 2 The pulse modulation device is applied in the following Examples 3 and 5 as a Q-switching device (Example 3) or a mode-locking device (Example 5) of a pulse-modulated laser for all-solid-state lasers.

Embodiment 2

[0053] Embodiment 2: As in Embodiment 1, the difference is that the substrate is a polycrystalline quartz plate with a thickness of 1-2mm; the VO 2 The material is 60nm thick and processed into circular flakes. The diameter is 2cm.

[0054] VO of this embodiment 2 The pulse modulation device is applied in the following embodiments 4 and 6 as a Q-switching device (embodiment 4) or a mode-locking device (embodiment 6) of a pulse modulation laser for all-solid-state lasers.

Embodiment 3

[0055] Example 3: An end-pumped VO 2 Q-switched device lasers

[0056] structured as image 3 As shown, the device includes pump source 3, fiber coupling system 4, focusing system 5, front cavity mirror 6, laser gain medium 7, VO 2 Modulation device 8 and output mirror 9 . where VO 2 Modulation device 8 is the product of embodiment 1.

[0057] The pumping source 3 is an LD laser with an emission wavelength of 808nm. The front cavity mirror 6 is a plane mirror, the surface near the pump source is coated with a dielectric film for anti-reflection of 808nm, and the surface near the resonant cavity is coated with a dielectric film with high reflection of 1.05-1.1 μm. Laser gain medium 7 is Nd:YAG crystal, Nd 3+ The ion concentration is 0.5at.%. The incident end face is coated with a dielectric film for anti-reflection of 808nm and 1064nm, and the exit end face is coated with a dielectric film for anti-reflection of 1064nm. VO 2 Modulation device 8 substrate does not grow V...

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Abstract

The invention relates to a layered VO2 laser pulse modulation device and an application of the layered VO2 laser pulse modulation device. The layered VO2 laser pulse modulation device comprises a substrate and a VO2 material deposited on the upper face of the substrate and is used for Q modulation and mode locking of lasers generating near-infrared rays so that a full-solid laser pulse modulation laser device can be produced. The full-solid laser pulse modulation laser device comprises a pumping source, a front endoscope, a laser gain medium, a VO2 modulation device and an output mirror. The VO2 modulation device is placed in a resonant cavity of the full-solid laser device, so that the laser device of a Q modulation device or a mode locking device is produced. The pulse modulation device has the advantages of being easy to manufacture, capable of facilitating industrialization and integration and the like.

Description

technical field [0001] The invention relates to the technical field of laser devices, in particular to layered VO 2 Laser pulse modulation devices and their applications in all-solid-state pulsed lasers. Background technique [0002] Laser is hailed as one of the greatest inventions of the 20th century. It has developed into a huge industry and has affected or is affecting many fields of the national economy. Due to the advantages of high peak power, large energy, and short action time, pulsed laser has been an important direction of laser development for a long time. There are two important technologies for realizing pulsed lasers: active modulation and passive modulation. Among them, passive modulation devices play an increasingly important role in pulsed lasers due to their advantages such as simple operation and compact structure. At present, the commonly used saturable absorbing materials are mainly chromium-doped yttrium aluminum garnet (Cr 4+ :Y 3 al 5 o 12 ) a...

Claims

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Application Information

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IPC IPC(8): H01S3/11
Inventor 张怀金于浩海王树贤王继扬陈延学梅良模
Owner SHANDONG UNIV