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A package structure of pulse power switch circuit

A pulsed power switch, circuit packaging technology, applied in circuits, pulse technology, electronic switches, etc., can solve the problems of complex circuit analysis and calculation, large influence of parasitic parameters, large stray parameters, etc., to reduce uneven current distribution, The distribution optimization of stray parameters, the effect of compact package structure

Active Publication Date: 2016-08-31
武汉脉冲芯电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Traditional pulse power circuits generally use wires or copper bars to connect discrete devices. The connection of each device is through bolts, and the metal contact at the connection is maintained by extrusion force, which brings large stray parameters and is difficult to calculate.
In addition, as the requirements for di / dt, maximum voltage, repetition frequency, etc. in the pulse power circuit are getting higher and higher, the influence of parasitic parameters is getting bigger and bigger, and the analysis and calculation of the circuit become quite complicated. , will also bring some unpredictable problems

Method used

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  • A package structure of pulse power switch circuit
  • A package structure of pulse power switch circuit
  • A package structure of pulse power switch circuit

Examples

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Embodiment 1

[0023] Such as figure 1 and figure 2 As shown, the packaging structure of the pulse power switch circuit includes: a first copper foil 1 , a semiconductor pulse power switch chip 2 , a capacitor 3 , a second copper foil 4 , a copper column 5 , a magnetic switch 6 and a third copper foil 7 . The magnetic switch 6 is a ring structure. One end of the capacitor 3 is welded to the third copper foil 7, and the other end is welded to one end of the copper column 5, the copper column 5 is perpendicular to the central axis of the capacitor 3, and the other end of the copper column 5 passes through the center of the magnetic switch 6 and is welded to the second copper foil 4, the second copper foil 4 is parallel to the central axis of the capacitor 3, and the other end is welded to the anode of the semiconductor pulse power switch chip 2 near the side of the capacitor 3, and the cathode of the semiconductor pulse power switch chip 2 is welded to the first copper foil 1 One end, the o...

Embodiment 2

[0025] Such as image 3 and Figure 4 As shown, the package structure of pulse power switch circuit includes: semiconductor pulse power switch chip 2, capacitor 3, magnetic switch 6, first DBC copper layer block 8, second DBC copper layer block 9, copper foil 10 and third DBC copper layer Block 11. A direct bonding copper (Direct Bonding Copper, DBC) layer is designed in advance to obtain a first DBC copper layer block 8 , a second DBC copper layer block 9 and a third DBC copper layer block 11 . The magnetic switch 6 is a ring structure, the second DBC copper layer block 9 passes through the center of the magnetic switch 6, and the two ends of the capacitor 3 are respectively welded on the first DBC copper layer block 8 and the second DBC copper layer block 9, and the semiconductor pulse The anode of the power switch chip 2 is welded on the second DBC copper layer block 9 , and the cathode is welded on the third DBC copper layer block 11 through the copper foil 10 . The mag...

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Abstract

The invention discloses a packaging structure of a pulse power switch circuit. Including the first copper foil, semiconductor pulse power switch chip, capacitor, second copper foil, copper pillar, magnetic switch and third copper foil; one end of the capacitor is welded with the third copper foil, and the other end is welded with one end of the copper pillar, and the copper pillar and The central axis of the capacitor is vertical, and the other end of the copper column passes through the center of the magnetic switch and is welded to one end of the second copper foil. The second copper foil is parallel to the central axis of the capacitor, and the other end of the second copper foil is welded to the semiconductor pulse power switch chip near the side of the capacitor. The anode of the semiconductor pulse power switch chip is welded with the first copper foil to the cathode. The invention packages a plurality of peripheral devices and a semiconductor pulse power switch together to form an integral module, which is small in size and perfect in function, reduces stray parameters and simplifies peripheral circuits, adopts a new packaging process, and enhances the stability of power devices. Reduced costs.

Description

technical field [0001] The invention belongs to the technical field of integrated packaging, and more specifically relates to a packaging structure of a pulse power switching circuit, which is mainly applied to a low-inductance pulse power supply device. Background technique [0002] Pulse power technology is a technology that compresses and stores energy with low power density and releases it with high power in a very short time. It began in 1962, and after decades of vigorous development, it has become an important engineering application technology, which has important scientific significance and application value in military and industry. For a pulsed power system, the core includes three technologies: circuit topology, insulation and switching. [0003] Common semiconductor pulse power switches include pulse thyristors, gate turn-off thyristors (GateTurn-off Thyristor, GTO), insulated gate bipolar transistors (Insulated Gate BipolarTransistor, IGBT), power metal-oxide ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/00H01L25/16H01L23/488H03K17/56
Inventor 梁琳常文光
Owner 武汉脉冲芯电子科技有限公司
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