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Method and device for removing aluminum trichloride from chlorosilane

A technology of aluminum trichloride and chlorosilane, which is applied in the direction of halosilane and silicon halide compounds, can solve the problems of low efficiency, high cost, deep pollution of chlorosilane, etc., and achieve good removal effect, low cost and simple process Effect

Inactive Publication Date: 2014-09-24
ZHEJIANG JINGGONG NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, phosphorus oxychloride cannot effectively control the erosion of chlorosilanes by aluminum halides when the temperature rises. In addition, excessive phosphorus oxychloride residues will also lead to deep pollution of chlorosilanes.
[0004] In view of the problems of low efficiency, high cost and inability to effectively control the quality of chlorosilane products in the removal of aluminum halides in chlorosilanes, there is an urgent need for a method that can effectively remove aluminum halides in chlorosilanes

Method used

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  • Method and device for removing aluminum trichloride from chlorosilane
  • Method and device for removing aluminum trichloride from chlorosilane

Examples

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Embodiment 1

[0035] A preparation device for a method of removing aluminum trichloride from chlorosilanes, such as figure 1 As shown, the raw liquid storage tank, the first distillation tower 2, the first impurity remover 3, the buffer tank 4, the second distillation tower 5, the second impurity remover 6, the condenser 7 and the purification storage tank 8 are sequentially included. The tank is connected to the bottom of the first distillation tower 2, the top of the first distillation tower 2 is connected to the first impurity remover 3, the first impurity remover 3 is connected to the top of the buffer tank 4, and the bottom of the buffer tank 4 is connected to the second distillation tower 5, The second distillation tower 5 is connected with the top of the second impurity remover 6, the top of the second distillation tower 5 is connected with the top of the condenser 7, the condenser 7 is connected with the purification storage tank 8, the first impurity remover 3 and the second impuri...

Embodiment 2

[0042] A preparation device for a method of removing aluminum trichloride from chlorosilanes, such as figure 1 As shown, the raw liquid storage tank, the first distillation tower 2, the first impurity remover 3, the buffer tank 4, the second distillation tower 5, the second impurity remover 6, the condenser 7 and the purification storage tank 8 are sequentially included. The tank is connected to the bottom of the first distillation tower 2, the top of the first distillation tower 2 is connected to the first impurity remover 3, the first impurity remover 3 is connected to the top of the buffer tank 4, and the bottom of the buffer tank 4 is connected to the second distillation tower 5, The second distillation tower 5 is connected with the top of the second impurity remover 6, the top of the second distillation tower 5 is connected with the top of the condenser 7, the condenser 7 is connected with the purification storage tank 8, the first impurity remover 3 and the second impuri...

Embodiment 3

[0049] A preparation device for a method of removing aluminum trichloride from chlorosilanes, such as figure 1 As shown, the raw liquid storage tank, the first distillation tower 2, the first impurity remover 3, the buffer tank 4, the second distillation tower 5, the second impurity remover 6, the condenser 7 and the purification storage tank 8 are sequentially included. The tank is connected to the bottom of the first distillation tower 2, the top of the first distillation tower 2 is connected to the first impurity remover 3, the first impurity remover 3 is connected to the top of the buffer tank 4, and the bottom of the buffer tank 4 is connected to the second distillation tower 5, The second distillation tower 5 is connected with the top of the second impurity remover 6, the top of the second distillation tower 5 is connected with the top of the condenser 7, the condenser 7 is connected with the purification storage tank 8, the first impurity remover 3 and the second impuri...

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Abstract

The invention relates to the field of production of chlorosilane, and particularly relates to a method and a device for removing aluminum trichloride from the chlorosilane. The method concretely comprises the following steps: heating and distilling the chlorosilane which contains aluminum trichloride in a first distillation tower at a distillation temperature of 45-65 DEG C, and entering volatile matters into a first impurity remover for removing impurities, wherein the first impurity remover is filled with adsorbent particles; filtering the volatile matters from which the impurities are removed by the first impurity remover and then heating and distilling the volatile matters in a second impurity remover at the distillation temperature of 180-195 DEG C, and entering the volatile matters into the second impurity remover which is filled with sodium salt particles; condensing the volatile matters from which the impurities are removed by the second impurity remover by use of a condenser and then filtering to obtain purified chlorosilane. The method is low in cost and good in removal effect, and also causes no deep pollution to the chlorosilane.

Description

technical field [0001] The invention relates to the production field of chlorosilanes, in particular to a method and a device for removing aluminum trichloride from chlorosilanes. Background technique [0002] Chlorosilane is an important chemical product. The production cost of chlorosilane is very low, but it is easy to generate halides, such as aluminum halides, during their production. The presence of aluminum halides makes chlorosilanes very unstable at elevated temperatures and can cause chlorosilanes to decompose during elevated temperatures. During the production process, impure solid silicon reacts with chlorine-containing gas, and many solid impurities remain in the reactor or in dust removal equipment such as cyclones. However, the properties of aluminum and some other contaminants such as antimony, boron, carbon, indium, gallium, phosphorus, thallium, tin, titanium, zinc, and zirconium are such that they form volatile compounds that are carried out of the reacti...

Claims

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Application Information

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IPC IPC(8): C01B33/107
Inventor 舒忠斌李波陶崇花
Owner ZHEJIANG JINGGONG NEW MATERIAL TECH
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