Method for preparing high-thermal-conductivity high-strength silicon nitride ceramic

A technology of silicon nitride ceramics and high thermal conductivity, which is applied in the field of non-oxide ceramic preparation, can solve the problem of high cost, and achieve the effect of low cost and simple preparation process

Inactive Publication Date: 2014-10-15
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the magnesium nitride silicide used in this meth

Method used

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  • Method for preparing high-thermal-conductivity high-strength silicon nitride ceramic
  • Method for preparing high-thermal-conductivity high-strength silicon nitride ceramic

Examples

Experimental program
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Effect test

Embodiment 1

[0029] With 5mol%Yb 2 o 3 and 5mol% MgO as a sintering aid, and 90mol% α-Si 3 N 4 The powder is mixed evenly by ball milling; then it is dry-pressed under 20MPa pressure, and then isostatically pressed under 200MPa pressure; it is then put into a graphite crucible and buried in Si 3 N 4 In the powder, pressure sintering was carried out at 1850° C. for 4 hours under a nitrogen atmosphere of 0.6 MPa; after the sintering, the sample was cooled to room temperature with the furnace.

[0030]The thermal conductivity of the silicon nitride ceramics prepared in this example is 82W / (m·K), the three-point bending strength is 966MPa, and the fracture toughness is 6.29MPa·m 1 / 2 . The XRD pattern of the ceramic material is shown in figure 1 As shown in (a), the fracture morphology is as follows figure 2 (a) shown.

Embodiment 2

[0032] With 5mol%Yb 2 o 3 and 5mol% MgO as a sintering aid, and 90mol% α-Si 3 N 4 The powder is mixed evenly by ball milling; then it is dry-pressed under 20MPa pressure, and then isostatically pressed under 200MPa pressure; it is then put into a graphite crucible and buried in Si 3 N 4 In the powder, pressure sintering was carried out at 1800° C. for 4 hours under a nitrogen atmosphere of 0.6 MPa; after sintering, the sample was cooled to room temperature with the furnace.

[0033] The thermal conductivity of the silicon nitride ceramics prepared in this example is 64W / (m K), the three-point bending strength is 810MPa, and the fracture toughness is 5.93MPa m 1 / 2 . The XRD pattern of the ceramic material is shown in figure 1 As shown in (b), the fracture morphology is as follows figure 2 (b) shown.

Embodiment 3

[0035] With 5mol%Yb 2 o 3 and 5mol% MgO as a sintering aid, and 90mol% α-Si 3 N 4 The powder is mixed evenly by ball milling; then it is dry-pressed under 20MPa pressure, and then isostatically pressed under 200MPa pressure; it is then put into a graphite crucible and buried in Si 3 N 4 In the powder, pressure sintering was carried out at 1750° C. for 4 hours under 0.6 MPa nitrogen atmosphere; after sintering, the sample was cooled to room temperature with the furnace.

[0036] The thermal conductivity of the silicon nitride ceramics prepared in this example is 57W / (m·K), the three-point bending strength is 752MPa, and the fracture toughness is 4.91MPa·m 1 / 2 . The XRD pattern of the ceramic material is shown in figure 1 As shown in (c), the fracture morphology is as follows figure 2 (c) shown.

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Abstract

A disclosed method for preparing high-thermal-conductivity high-strength silicon nitride ceramic comprises: uniformly mixing alpha-Si3N4 powder and a sinter aid according to a ratio, and then successively performing dry-pressing forming and isostatic pressing processing, so as to prepare a blank, wherein the sintering aid is a mixture employing Yb2O3 as a main sintering aid and employing at least one of Y2O3, Lu2O3, Nd2O3, Er2O3 and MgO as an auxiliary sintering aid; and embedding the prepared blank in Si3N4 powder, and performing gas pressure sintering at 1650-1850 DEG C in inert atmosphere, and then cooling to room temperature along with a furnace. The silicon nitride ceramic material prepared by using the method has high thermal conductivity and high strength, and is capable of satisfying application requirements of silicon nitride ceramic to fields such as high-speed circuits and large-power devices. The preparation method is simple in technology and low in cost, is suitable of large-scale production, and has practical value.

Description

technical field [0001] The invention relates to a method for preparing silicon nitride ceramics with high thermal conductivity and high strength, and belongs to the technical field of non-oxide ceramics preparation. Background technique [0002] With the rapid development of large-scale integrated circuits and the miniaturization of electronic components, higher requirements are put forward for ceramic substrates, which are important pillars of integrated circuits. In some special and harsh application environments, the ceramic substrate is required not only to have good thermal conductivity, but also to have excellent mechanical strength. The widely used ceramic substrate material is mainly Al 2 o 3 , but Al 2 o 3 Ceramic thermal conductivity is low (20W·m -1 ·K -1 ), large dielectric constant, linear expansion coefficient, and a large difference between the linear expansion coefficient and the silicon element, which are increasingly unable to meet more sophisticated ...

Claims

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Application Information

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IPC IPC(8): C04B35/584C04B35/622
Inventor 林森曾宇平
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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