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Preparation method of sulfur ion fluorescent chemical sensor based on silicon nanowire or silicon nanowire array

A silicon nanowire array and chemical sensor technology, applied in the field of fluorescent chemical sensors, can solve the problems of cumbersome synthesis steps and achieve high sensitivity and fast response

Inactive Publication Date: 2014-11-19
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Their disadvantage is that the synthesis steps are cumbersome, and the probes are dispersed into the solution to detect sulfide ions.

Method used

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  • Preparation method of sulfur ion fluorescent chemical sensor based on silicon nanowire or silicon nanowire array
  • Preparation method of sulfur ion fluorescent chemical sensor based on silicon nanowire or silicon nanowire array
  • Preparation method of sulfur ion fluorescent chemical sensor based on silicon nanowire or silicon nanowire array

Examples

Experimental program
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Effect test

Embodiment 1

[0032] 1) Soak silicon nanowires with a diameter of 10-15 nm prepared by chemical vapor deposition in concentrated sulfuric acid (98% mass fraction) and H at a volume ratio of 1:1 2 o 2 (mass fraction is 5%) in the mixed solution, after the temperature is 95 ℃, carry out treatment for 30 minutes, after washing with deionized water to neutrality, normal temperature is soaked in the H that the volume ratio is 3:1:1 2 O:H 2 o 2 (mass fraction is 30%): NH 4 OH in a mixed solution for 2.5 hours, washed with water until neutral, and dried in vacuum to obtain hydroxylated silicon nanowires;

[0033] 2) At room temperature, dry 30 mg of the hydroxylated silicon nanowires obtained in step 1), 10 mL of anhydrous toluene and 0.1 mL of 3-[2-(2-aminoethylamino)ethylamino]propane Base-trimethoxysilane was added to the reactor, heated to 50°C under the protection of nitrogen, and reacted at constant temperature for 48 hours, then cooled to room temperature, and cleaned with ethanol to re...

Embodiment 2

[0039] 1) Soak the silicon nanowire array (the diameter of the silicon nanowire in the silicon nanowire array is 200-400nm and the length is 15-20μm) prepared by the chemical etching method with a silicon wafer size of 1cm×1cm in a volume ratio of 1:1 concentrated sulfuric acid (mass fraction is 98%) and H 2 o 2 (mass fraction is 5%) in the mixed solution, after the temperature is 95 ℃, carry out treatment for 30 minutes, after washing with deionized water to neutrality, normal temperature is soaked in the H that the volume ratio is 3:1:1 2 O:H 2 o 2 (mass fraction is 30%): NH 4 OH in a mixed solution for 2.5 hours, washed with water until neutral, and dried in vacuum to obtain a hydroxylated silicon nanowire array;

[0040] 2) At room temperature, dry the hydroxylated silicon nanowire array obtained in step 1), 10 mL of anhydrous toluene and 0.1 mL of 3-[2-(2-aminoethylamino)ethylamino]propane Base-trimethoxysilane was added to the reactor, heated to 50°C under the prote...

Embodiment 3

[0046] 1) Soak silicon nanowires with a diameter of 10-15 nm prepared by chemical vapor deposition in concentrated sulfuric acid (50% mass fraction) and H at a volume ratio of 8:1 2 o 2 (mass fraction is 30%) in the mixed solution, after treating at 70 ℃ for 90 minutes, after washing with deionized water to neutrality, soaking in H at room temperature with a volume ratio of 9:1:1 2 O:H 2 o 2 (Mass fraction is 5%): NH 4 OH in a mixed solution for 1 hour, washed with water until neutral, and dried in vacuum to obtain hydroxylated silicon nanowires;

[0047] 2) At room temperature, 50 mg of the hydroxylated silicon nanowires obtained in step 1), 30 mL of anhydrous toluene and 0.4 mL of 3-[2-(2-aminoethylamino)ethylamino]propyl- Trimethoxysilane was added to the reactor, heated to 90°C under the protection of nitrogen, reacted at constant temperature for 12 hours, then cooled to room temperature, and cleaned with acetone ultrasonically to remove unreacted 3-[2-(2-aminoethylami...

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Abstract

The invention belongs to a fluorescent chemical sensor in a one-dimension nano structure and especially relates to a preparation method of sulfur ion fluorescent chemical sensor based on silicon nanowire or silicon nanowire array. Surfaces of the silicon nanowire or the silicon nanowire array are covalently modified successively by 3-[2-(2-aminoethylamino)ethylamino]propyl-trimethoxy silane and 4-amino-1,8-naphthalic anhydride. An obtained silicon nanowire, or silicon nanowire array, of which the surfaces are modified by 4-amino-1,8-naphthalic dimethylamide fluorescent groups is further reacted with copper ion to form a complex for obtaining the sulfur ion fluorescent chemical sensor based on the silicon nanowire or the silicon nanowire array. The sulfur ion fluorescent chemical sensor based on the silicon nanowire or the silicon nanowire array can be used in detection of sulfur ion in a solution system containing the sulfur ion and has a wide application prospect in detection of the sulfur ion in a water body in real time and in situ.

Description

technical field [0001] The invention belongs to a one-dimensional nanostructure fluorescent chemical sensor, in particular to a preparation method of a sulfur ion fluorescent chemical sensor based on silicon nanowires or silicon nanowire arrays. Background technique [0002] Sulfide ion is a toxic environmental pollutant. Sulfide ions produced in industrial production and ecosystems have caused serious pollution to the environment. Among the methods for detecting sulfur ions reported in the literature, the fluorescence analysis method has unique advantages such as high sensitivity and simple operation. In recent years, sulfide fluorescent probes based on displacement mechanism have received great attention due to their high sensitivity and fast response, such as K.Sasakura, JACS.2011,133,18003; H.Xianfeng, Nanotechnololy.2013.24.335502 However, the vast majority of these fluorescent probes are small molecular compounds, and a few are based on semiconductor fluorescent quan...

Claims

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Application Information

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IPC IPC(8): G01N21/64
Inventor 穆丽璇王会敏师文生
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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