Preparation method of a three-dimensional carbon microarray and hydrotalcite composite material and its application as an enzyme-free sensor
A composite material and hydrotalcite technology, applied in the field of electrochemical biosensors and their preparation, can solve the problems of poor sensor performance, limited molecular weight, etc., to reduce production costs, broaden application fields, and have good operational stability and storage stability. Effect
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Embodiment 1
[0032] (1) Place the silicon chip in acetone, ethanol, and secondary water in sequence for 20 minutes, rinse with acetone, and finally wash with N 2 Blow dry; in a clean room, spin-coat SU-82050 photoresist on the treated silicon wafer as a substrate, and place it on a glue-baking table after self-levelling at 23°C and a relative humidity of 50% for 30 minutes For pre-baking, first dry at 65°C for 15 minutes, then dry at 95°C for 30 minutes, and finally cool for 40 minutes at a temperature of 23°C and a relative humidity of 50% to obtain a photoresist film; the diameter of the hole is 40μm, mask pattern with a pitch of 80μm for exposure, the exposure dose is 360mJ / cm 2 , the pattern after exposure is immediately medium-baked, dried on a rubber drying table at 95°C for 25 minutes, then cooled at 23°C and a relative humidity of 50% for 20 minutes; finally soaked in a developer for 30 minutes, and dissolved without occurrence Cross-linked photoresist to obtain a photoresist micr...
Embodiment 2
[0044] (1) Place the silicon chip in acetone, ethanol, and secondary water in sequence for 20 minutes, rinse with acetone, and finally wash with N 2 Blow dry; in a clean room, spin-coat SU-82025 photoresist on the treated silicon wafer as a substrate, and place it on a glue-baking table after self-levelling at 23°C and a relative humidity of 50% for 30 minutes For pre-baking, first dry at 67°C for 13 minutes, then dry at 97°C for 26 minutes, and finally cool for 30 minutes at a temperature of 23°C and a relative humidity of 50% to obtain a photoresist film; 30μm, mask pattern with a pitch of 80μm for exposure, the exposure dose is 270mJ / cm 2 , the pattern after exposure is immediately medium-baked, dried on a rubber drying table at 95°C for 20 minutes, then placed at 23°C, and cooled for 25 minutes at a relative humidity of 50%; finally soaked in the developer for 40 minutes, and no dissolution occurs Cross-linked photoresist to obtain a photoresist microarray;
[0045] (2) ...
Embodiment 3
[0053] (1) Place the silicon chip in acetone, ethanol, and secondary water in turn for 15 minutes, rinse with acetone, and finally wash with N 2 Blow dry; in a clean room, spin-coat SU-82100 photoresist on the treated silicon wafer as a substrate, and place it on a glue-baking table after self-leveling at 23°C and a relative humidity of 50% for 40 minutes For pre-baking, first dry at 63°C for 20 minutes, then dry at 94°C for 40 minutes, and finally cool for 60 minutes at a temperature of 23°C and a relative humidity of 50% to obtain a photoresist film; 50μm, the mask pattern with a pitch of 50μm is exposed, and the exposure dose is 540mJ / cm 2 , the pattern after exposure is immediately medium-baked, dried on a rubber drying table at 94°C for 40 minutes, then cooled at 23°C and a relative humidity of 50% for 30 minutes; finally soaked in a developer for 40 minutes, and dissolved without occurrence Cross-linked photoresist to obtain a photoresist microarray;
[0054] (2) the o...
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